Synthesis and fundamental energy analysis of fault-tolerant CMOS circuits

Author(s):  
Ilke Ercan ◽  
Omercan Susam ◽  
Mustafa Altun ◽  
M. Husrev Cilasun
2014 ◽  
Vol 30 (4) ◽  
pp. 401-413 ◽  
Author(s):  
D. A. Tran ◽  
A. Virazel ◽  
A. Bosio ◽  
L. Dilillo ◽  
P. Girard ◽  
...  

Circuit World ◽  
2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Tianshu Li ◽  
Shukai Duan ◽  
Jun Liu ◽  
Lidan Wang

Purpose Stochastic computing which is an alternative method of the binary calculation has key merits such as fault-tolerant capability and low hardware cost. However, the hardware response time of it is required to be very fast due to its bit-wise calculation mode. While the complementary metal oxide semiconductor (CMOS) components are difficult to meet the requirements aforementioned. For this, the stochastic computing implementation scheme based on the memristive system is proposed to reduce the response time. The purpose of this paper is to provide the implementation scheme based memristive system for the stochastic computing. Design/methodology/approach The hardware structure of material logic based on the memristive system is realized according to the advantages of the memristor. After that, the scheme of NOT logic, AND logic and multiplexer are designed, which are the basic units of stochastic computing. Furthermore, a stochastic computing system based on memristive combinational logic is structured and its validity is verified successfully by operating a case. Findings The numbers of the elements of the proposed stochastic computing system are less than the conventional stochastic computing based on CMOS circuits. Originality/value The paper proposed a novel implementation scheme for stochastic computing based on the memristive systems, which are different from the conventional stochastic computing based on CMOS circuits.


Author(s):  
Neil Joye ◽  
Alexandre Schmid ◽  
Yusuf Leblebici ◽  
Tetsuya Asai ◽  
Yoshihito Amemiya

Author(s):  
J. R. Fields

The energy analysis of electrons scattered by a specimen in a scanning transmission electron microscope can improve contrast as well as aid in chemical identification. In so far as energy analysis is useful, one would like to be able to design a spectrometer which is tailored to his particular needs. In our own case, we require a spectrometer which will accept a parallel incident beam and which will focus the electrons in both the median and perpendicular planes. In addition, since we intend to follow the spectrometer by a detector array rather than a single energy selecting slit, we need as great a dispersion as possible. Therefore, we would like to follow our spectrometer by a magnifying lens. Consequently, the line along which electrons of varying energy are dispersed must be normal to the direction of the central ray at the spectrometer exit.


Author(s):  
V. Serin ◽  
K. Hssein ◽  
G. Zanchi ◽  
J. Sévely

The present developments of electron energy analysis in the microscopes by E.E.L.S. allow an accurate recording of the spectra and of their different complex structures associated with the inner shell electron excitation by the incident electrons (1). Among these structures, the Extended Energy Loss Fine Structures (EXELFS) are of particular interest. They are equivalent to the well known EXAFS oscillations in X-ray absorption spectroscopy. Due to the EELS characteristic, the Fourier analysis of EXELFS oscillations appears as a promising technique for the characterization of composite materials, the major constituents of which are low Z elements. Using EXELFS, we have developed a microstructural study of carbon fibers. This analysis concerns the carbon K edge, which appears in the spectra at 285 eV. The purpose of the paper is to compare the local short range order, determined by this way in the case of Courtauld HTS and P100 ex-polyacrylonitrile carbon fibers, which are high tensile strength (HTS) and high modulus (HM) fibers respectively.


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