Minority Carrier Transport and Emitter Transit Time in Polysilicon Emitter Bipolar Transistors

Author(s):  
Y.C. Luo ◽  
S.J. Wang
2000 ◽  
Vol 369 (1-2) ◽  
pp. 347-351 ◽  
Author(s):  
B. Heinemann ◽  
D. Knoll ◽  
G.G. Fischer ◽  
P. Schley ◽  
H.J. Osten

1994 ◽  
Vol 05 (03) ◽  
pp. 395-410
Author(s):  
Y.K. CHEN ◽  
D.A. HUMPHREY ◽  
L. FAN ◽  
R.A. HAMM ◽  
D. SIVCO ◽  
...  

The noise characteristics of InP -based heterostructure bipolar transistors (HBTs) are studied from low frequency to microwave frequency. The nonequilibrium minority carrier transport in the thin base region is very effective in reducing the 1/f noise current at low frequency as well as reducing the uncorrelated shot noise current at high frequency. Experimentally, a very low 1/f noise corner frequency of 1.55 kHz is obtained in AlInAs/InGaAs HBTs with a 70 nm-thick base. This is the lowest 1/f corner frequency amongst any compound semiconductor devices reported to date. Minimum noise figures of 0.46 dB, 2.0 dB and 3.33 dB are also demonstrated at 2 GHz, 10 GHz and 18 GHz, respectively, with InP/InGaAs HBTs with a 35 nm-thick base and 3.5×3.5 μ m 2 emitter.


Author(s):  
E. Crabbe ◽  
S. Swirhun ◽  
J. del Alamo ◽  
R.F.W. Pease ◽  
R.M. Swanson

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