High performance submicron SOI devices with silicon film thickness below 50 nm

2002 ◽  
Author(s):  
C. Raynaud ◽  
O. Faynot ◽  
B. Giffard ◽  
J. Gautier
Keyword(s):  
Film Thickness ◽  
High Performance ◽  
Silicon Film ◽  
Soi Devices

Impact of Silicon Film Thickness on LF Noise in SOI Devices

2006 ◽  
Author(s):  
Leily Zafari ◽  
Jalal Jomaah ◽  
Gerard Ghibaudo
Keyword(s):  
Film Thickness ◽  
Silicon Film ◽  
Soi Devices

High Performance Metal Surface Coating Using Ta2O5 Thin Film Prepared by D.C. Magnetron Sputtering

2014 ◽  
Vol 979 ◽  
pp. 240-243
Author(s):  
Narathon Khemasiri ◽  
Chanunthorn Chananonnawathorn ◽  
Mati Horprathum ◽  
Pitak Eiamchai ◽  
Pongpan Chindaudom ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Metal Surface ◽  
High Performance ◽  
Grazing Incidence ◽  
Surface Finishing ◽  
Afm Micrographs ◽  
Protective Performance

Tantalum oxide (Ta2O5) thin films were deposited as the protective layers for the metal surface finishing by the DC reactive magnetron sputtering system. The effect of the Ta2O5 film thickness, ranging from 25 nm to 200 nm, on the physical properties and the anti-corrosive performance were investigated. The grazing-incidence X-ray diffraction (GIXRD) and the atomic force microscopy (AFM) were used to examine the crystal structures and the surface topologies of the prepared films, respectively. The XRD results showed that the Ta2O5 thin films were all amorphous. The AFM micrographs demonstrated the film morphology with quite smooth surface features. The surface roughness tended to be rough when the film thickness was increased. To examine the protective performance of the films, the poteniostat and galvanometer was utilized to examine the electrochemical activities with the 1M NaCl as the corrosive electrolyte. The results from the I-V polarization curves (Tafel slope) indicated that, with the Ta2O5 thin film, the current density was significantly reduced by 3 orders of magnitude when compared with the blank sample. Such results were observed because of fully encapsulated surface of the samples were covered with the sputtered Ta2O5 thin films. The study also showed that the Ta2O5 thin film deposited at 50 nm yielded the most extreme protective performance. The Ta2O5 thin films therefore could be optimized for the smallest film thickness for highly potential role in the protective performance of the metal surface finishing products.

Pulsed Laser-Induced Amorphization of Silicon Films

1991 ◽  
Vol 235 ◽  
Author(s):  
T. Sameshima ◽  
S. Usui
Keyword(s):  
Grain Size ◽  
Film Thickness ◽  
Silicon Film ◽  
Pulsed Laser ◽  
Temperature Sensing ◽  
Silicon Films ◽  
Molten Silicon ◽  
Quartz Substrates ◽  
Xecl Excimer Laser

ABSTRACTAmorphization of silicon films occurred through homogeneous solidification of molten silicon layers on quartz substrates induced by irradiation with a 30ns-XeCl excimer laser. The crystalline nucleation rate was obtained to be 8×1030m−3s−1. Silicon films were completely amorphized for films thinner than 18nm. Complete amorphizatoin is brought about by reduced grain size and reduced recalescence as the film thickness decreases. Recalescence was observed in situusing transient thermometry with a platinum-temperature-sensing layer when a 15nm-thick silicon film was amorphized.

High Performance ITO Nanoparticles as Nanoink for Printing as a Substitute Process of Sputtering

2014 ◽  
Vol 1699 ◽  
Author(s):  
Atsushi Muramatsu ◽  
Kiyoshi Kanie ◽  
Takafumi Sasaki ◽  
Masafumi Nakaya
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Crystalline Structure ◽  
Quaternary Ammonium ◽  
High Performance ◽  
Ammonium Hydroxide ◽  
Recycling Process ◽  
Tin Oxides ◽  
Ca 50 ◽  
Ito Nanoparticles

ABSTRACTGenerally, indium-tin-oxides (ITO) thin film is prepared by the sputtering process with ITO target, but only 20% of ITO yielded from the target is deposited on the substrate. Namely, about 80% ITO is exhausted by the deposition elsewhere far from the substrate. The recycling process is limited so that ca 20% ITO of the starting target is lost without any recovery. Even if the recycling of ITO has been carried out in this process, we should prepare ITO target of 5 times more than apparent use of ITO on film. If we change it to printing process from the sputtering, the reduction in ITO use is expected as ca. 50%, considering the increase in film thickness by printing. Our target technology also includes ITO nanoink for the project. As a result, monodispersed ITO nanoparticles (NPs) with a cubic shape were fabricated by using quaternary ammonium hydroxide-assisted metal hydroxide organogels. These NPs have perfect uniformity in size with beautiful shape, and perfect single crystalline structure including Sn. As we were attempted to make thin film with ITO nanoink, it was successfully fabricated below 200 nm in thickness and the resistivity was drastically decreased below 1.0 x 10-3 Ω cm after heat treatments. GZO nanoink as substitute of ITO has also been developed.

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