A new VLSI memory cell using capacitance coupling (CC cell)

1984 ◽  
Vol 31 (9) ◽  
pp. 1319-1324 ◽  
Author(s):  
K. Terada ◽  
T. Ishijima ◽  
S. Kurosawa ◽  
S. Suzuki
Keyword(s):  
Memory Cell ◽  
Capacitance Coupling

A new VLSI memory cell using capacitance coupling

1982 ◽  
Author(s):  
K. Terada ◽  
M. Takada ◽  
T. Ishijima ◽  
S. Kurosawa ◽  
S. Suzuki
Keyword(s):  
Memory Cell ◽  
Capacitance Coupling

On the Capacitance Coupling Ratios of a Source-Side Injection Flash Memory Cell

2000 ◽  
Author(s):  
Chun-Mai Liu ◽  
James Brennan ◽  
Kaiman Chan ◽  
Ping Guo ◽  
Albert V. Kordesch ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Cell ◽  
Flash Memory Cell ◽  
Capacitance Coupling

On the Capacitance Coupling Ratios of a Source-Side Injection Flash Memory Cell

2001 ◽  
Vol 40 (Part 1, No. 4B) ◽  
pp. 2958-2962 ◽  
Author(s):  
Chun-Mai Liu ◽  
James Brennan ◽  
Kaiman Chan ◽  
Ping Guo ◽  
Albert V. Kordesch ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Cell ◽  
Flash Memory Cell ◽  
Capacitance Coupling

Carrier Profiling of the 10-nm-order Structure in a 3D Flash Memory Cell Using Scanning Nonlinear Dielectric Microscopy

2019 ◽  
Author(s):  
Jun Hirota ◽  
Ken Hoshino ◽  
Tsukasa Nakai ◽  
Kohei Yamasue ◽  
Yasuo Cho
Keyword(s):  
Spatial Resolution ◽  
Flash Memory ◽  
Analytical Techniques ◽  
Memory Cell ◽  
Memory Device ◽  
Floating Gate ◽  
Order Structure ◽  
Carrier Distribution ◽  
Nonlinear Dielectric ◽  
Flash Memory Cell

Abstract In this paper, the authors report their successful attempt to acquire the scanning nonlinear dielectric microscopy (SNDM) signals around the floating gate and channel structures of the 3D Flash memory device, utilizing the custom-built SNDM tool with a super-sharp diamond tip. The report includes details of the SNDM measurement and process involved in sample preparation. With the super-sharp diamond tips with radius of less than 5 nm to achieve the supreme spatial resolution, the authors successfully obtained the SNDM signals of floating gate in high contrast to the background in the selected areas. They deduced the minimum spatial resolution and seized a clear evidence that the diffusion length differences of the n-type impurity among the channels are less than 21 nm. Thus, they concluded that SNDM is one of the most powerful analytical techniques to evaluate the carrier distribution in the superfine three dimensionally structured memory devices.

SILC effects on E/sup 2/PROM memory cell reliability

2002 ◽  
Vol 2 (1) ◽  
pp. 13-18 ◽  
Author(s):  
L. Larcher ◽  
S. Bertulu ◽  
P. Pavan
Keyword(s):  
Memory Cell
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