Potentiality for Low Temperature—High Field Application of Iron Chalcogenide Thin Films

This perspective summarises the key synthetic routes to iron chalcogenide thin films/nanoparticles by highlighting the key aspects that lead to control over phase/morphology.

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Origin of the emergence of higher T c than bulk in iron chalcogenide thin films

Scientific Reports ◽

10.1038/s41598-017-10383-1 ◽

2017 ◽

Vol 7 (1) ◽

Cited By ~ 10

Author(s):

Sehun Seo ◽

Jong-Hoon Kang ◽

Myeong Jun Oh ◽

Il-Seok Jeong ◽

Jianyi Jiang ◽

...

Keyword(s):

Thin Films ◽

Iron Chalcogenide ◽

Chalcogenide Thin Films

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High field effects in chalcogenide thin films

Solid-State Electronics ◽

10.1016/0038-1101(72)90003-2 ◽

1972 ◽

Vol 15 (6) ◽

pp. 611-616 ◽

Cited By ~ 35

Author(s):

T. Stubb ◽

T. Suntola ◽

O.J.A. Tiainen

Keyword(s):

Thin Films ◽

High Field ◽

Field Effects ◽

Chalcogenide Thin Films

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On the interpretation of high field effects in chalcogenide thin films

Solid-State Electronics ◽

10.1016/0038-1101(73)90163-9 ◽

1973 ◽

Vol 16 (5) ◽

pp. 629-631 ◽

Cited By ~ 9

Author(s):

J.M. Marshall

Keyword(s):

Thin Films ◽

High Field ◽

Field Effects ◽

Chalcogenide Thin Films

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Observation by HVEM of the martensite transformation and the superconducting transition in Nb3Sn

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100106004 ◽

1988 ◽

Vol 46 ◽

pp. 788-789

Author(s):

M. A. Kirk ◽

M. C. Baker ◽

B. J. Kestel ◽

H. W. Weber

Keyword(s):

Thin Films ◽

Low Temperature ◽

Superconducting State ◽

Martensite Transformation ◽

Sputter Deposition ◽

Diffusion Reaction ◽

Solute Diffusion ◽

Superconducting Transition ◽

Twin Boundaries ◽

Martensite Structure

It is well known that a number of compound superconductors with the A15 structure undergo a martensite transformation when cooled to the superconducting state. Nb3Sn is one of those compounds that transforms, at least partially, from a cubic to tetragonal structure near 43 K. To our knowledge this transformation in Nb3Sn has not been studied by TEM. In fact, the only low temperature TEM study of an A15 material, V3Si, was performed by Goringe and Valdre over 20 years ago. They found the martensite structure in some foil areas at temperatures between 11 and 29 K, accompanied by faults that consisted of coherent twin boundaries on {110} planes. In pursuing our studies of irradiation defects in superconductors, we are the first to observe by TEM a similar martensite structure in Nb3Sn.Samples of Nb3Sn suitable for TEM studies have been produced by both a liquid solute diffusion reaction and by sputter deposition of thin films.

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Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

MRS Proceedings ◽

10.1557/proc-444-161 ◽

1996 ◽

Vol 444 ◽

Cited By ~ 1

Author(s):

Hyeon-Seag Kim ◽

D. L. Polla ◽

S. A. Campbell

Keyword(s):

Thin Films ◽

Loss Factor ◽

High Field ◽

Microelectromechanical Systems ◽

Charge Trapping ◽

Metal Organic ◽

Electrical Reliability ◽

Silicon Based ◽

Degradation Properties ◽

Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

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