Conductive Anodic Filament Reliability of Small and Fine-Pitch Through Vias in Halogen-Free Organic Packaging Substrate

Author(s):  
Koushik Ramachandran ◽  
Fuhan Liu ◽  
Venky Sundaram ◽  
Rao Tummala
2010 ◽  
Vol 2010 (1) ◽  
pp. 000829-000835
Author(s):  
Koushik Ramachandran ◽  
Fuhan Liu ◽  
Nitesh Kumbhat ◽  
Baik-Woo Lee ◽  
Venky Sundaram ◽  
...  

High I/O density and green materials are the two major drivers of package substrates for flip-chip and 3D IC packaging. Future organic laminate substrates will require 5–25 μm lines and spaces and through-package-via (TPV) pitch of 50–100 μm. This ultra fine pitch requirement will lead to serious substrate failures due to electrochemical migration and conductive anodic filament (CAF). Therefore, there is a need to develop new halogen-free materials and investigate their reliability in ultra-fine pitch applications. This work focuses on four areas, 1) Advanced halogen-free materials, 2) Surface insulation resistance (SIR) in fine lines and spaces, 3) Conductive anodic filament (CAF) in fine-pitch TPVs, and 4) Flip-chip interconnection reliability. The substrate materials selected for this study include resin formulations that incorporate halogen-free flame retardants onto the polymer backbone. The SIR was studied on substrates with 50 μm spaced copper traces and CAF was studied with TPVs of 150 μm and 400 μm spacing. In both the tests, the halogen-free substrates were observed to show better electrochemical migration resistance in comparison to brominated FR-4. Flip-chip reliability was studied by subjecting the test substrates to Thermal Cycling Test (TCT), Unbiased-Highly Accelerated Stress Test (U-HAST) and High Temperature Storage (HTS) test. Scanning Acoustic Microscopy (C-SAM) analysis and electrical resistance measurements were performed after each of the reliability tests. The test substrates passed 200 hours of HTS, 96 hours of HAST and 2000 cycles in TCT respectively. The flip-chip reliability results indicate that these materials have the potential for replacing the conventional halogenated substrates for high density packaging applications.


2012 ◽  
Vol 42 (2) ◽  
pp. 348-354 ◽  
Author(s):  
Koushik Ramachandran ◽  
Fuhan Liu ◽  
P. Markondeya Raj ◽  
Venky Sundaram ◽  
Rao Tummala

Author(s):  
Koushik Ramachandran ◽  
Fuhan Liu ◽  
Nitesh Kumbhat ◽  
Mark Wilson ◽  
Venky Sundaram ◽  
...  

2014 ◽  
Vol 25 (4) ◽  
pp. 1687-1695 ◽  
Author(s):  
Koushik Ramachandran ◽  
W. Jud Ready ◽  
P. Markondeya Raj ◽  
Venky Sundaram ◽  
Rao Tummala

Author(s):  
Dennis Clouthier ◽  
Phillip Sheridan ◽  
Bing Jin ◽  
Robert Grimminger
Keyword(s):  

Author(s):  
Daniel Nuez ◽  
Phoumra Tan

Abstract Conductive anodic filament (CAF) formation is a mechanism caused by an electrochemical migration of metals from a metal trace in ICs or in PCBs. This is commonly caused by the moisture build-up in the affected metal terminals in an IC package or PC board caused by critical temperature, high humidity and high voltage gradients conditions. This phenomenon is known to have caused catastrophic field failures on various OEMs electronic components in the past [1,7]. Most published articles on CAF described the formation of the filament in a lateral formation through the glass fiber interfaces between two adjacent metal planes [1-6, 8-12]. One common example is the CAF formation seen between PTH (Plated through Hole) in the laminated substrate with two different potentials causing shorts [1-6, 8-12]. In this paper, the Cu filament grows in a vertical fashion (z-axis formation) creating a vertical plane shorts between the upper and lower metal terminals in a laminated IC package substrate. The copper growth migration does not follow the fiber strands laterally or vertically through them. Instead, it grows through the stress created gaps between the impregnated carbon epoxy fillers from the upper metal trace to the lower metal trace with two different potentials, between the glass fibers. This vertical CAF mechanism creates a low resistive short that was sometimes found to be intermittent in nature. This paper presents some successful failure analysis approaches used to isolate and detect the failure locations for this type of failing devices. This paper also exposes the unique physical appearance of the vertical CAF formation.


Author(s):  
Bob Wettermann

Abstract As the pitch and package sizes of semiconductor devices have shrunk and their complexity has increased, the manual methods by which the packages can be re-bumped or reballed for failure analysis have not kept up with this miniaturization. There are some changes in the types of reballing preforms used in these manual methods along with solder excavation techniques required for packages with pitches as fine as 0.3mm. This paper will describe the shortcomings of the previous methods, explain the newer methods and materials and demonstrate their robustness through yield, mechanical solder joint strength and x-ray analysis.


Author(s):  
Bhanu Sood ◽  
Michael Pecht

Abstract Failures in printed circuit boards account for a significant percentage of field returns in electronic products and systems. Conductive filament formation is an electrochemical process that requires the transport of a metal through or across a nonmetallic medium under the influence of an applied electric field. With the advent of lead-free initiatives, boards are being exposed to higher temperatures during lead-free solder processing. This can weaken the glass-fiber bonding, thus enhancing conductive filament formation. The effect of the inclusion of halogen-free flame retardants on conductive filament formation in printed circuit boards is also not completely understood. Previous studies, along with analysis and examinations conducted on printed circuit boards with failure sites that were due to conductive filament formation, have shown that the conductive path is typically formed along the delaminated fiber glass and epoxy resin interfaces. This paper is a result of a year-long study on the effects of reflow temperatures, halogen-free flame retardants, glass reinforcement weave style, and conductor spacing on times to failure due to conductive filament formation.


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