Erratum for "A Physics-Based Analytic Solution to the MOSFET Surface Potential From Accumulation to Strong-Inversion Region"

2007 ◽  
Vol 54 (2) ◽  
pp. 372-372 ◽  
Author(s):  
Jin He
Keyword(s):  
Surface Potential ◽  
Analytic Solution ◽  
Inversion Region ◽  
Strong Inversion

QUASI TWO-DIMENSIONAL ANALYSIS OF THE SURFACE POTENTIAL FOR POLY-Si THIN FILM TRANSISTORS BASED ON THE CHANNEL POTENTIAL

2012 ◽  
Vol 26 (10) ◽  
pp. 1250069 ◽  
Author(s):  
ZHEN ZHU ◽  
JUNHAO CHU
Keyword(s):  
Thin Film ◽  
Dimensional Analysis ◽  
Surface Potential ◽  
Thin Film Transistors ◽  
Potential Model ◽  
Two Dimensional ◽  
Inversion Region ◽  
Strong Inversion ◽  
Channel Potential ◽  
Drain Bias

A quasi two-dimensional analysis of the surface potential for polycrystalline silicon thin film transistors based on the channel potential is developed. Since the drain bias is taken into account, the surface potential model is proposed to approach the surface potential in the two-dimensional device although this model is developed by solving the one-dimensional Poisson's equation. This model is derived under the relative high gate and low drain biases while devices are operated in the strong inversion region. It is obtained by introducing the channel potential expression containing the drain bias and the normalized channel distance. And this channel-potential-based surface potential model is verified by the two-dimensional-device simulator in various gate voltages, various drain voltages and various channel lengths. This model well characterizes the surface potential distribution along the device's channel in the strong inversion region under the relative high gate and low drain biases.

Degradation of MEH-PPV due to Oxygen/Moisture Traps through C-V Analysis and Attenuated Total Reflection IR Spectroscopy

2004 ◽  
Vol 814 ◽  
Author(s):  
R. K. Khillan ◽  
Y. Su ◽  
K. Varahramyan
Keyword(s):  
Ir Spectroscopy ◽  
Negative Ions ◽  
Optical Microscope ◽  
Total Reflection ◽  
Attenuated Total Reflection ◽  
Weak Inversion ◽  
Inversion Region ◽  
Optical Images ◽  
Strong Inversion ◽  
Capacitance Voltage

AbstractWe present the studying of oxygen and moisture traps in MEH-PPV through the MIS Capacitance – Voltage (C-V) analysis, and the Attenuated Total Reflection Infrared (ATR IR) spectroscopy technique. The presence of oxygen studied by ATR IR has also been verified by optical images from high resolution optical microscope. In quasi-static C-V measurements of the MIS (Al/MEH-PPV/p-Si) capacitors made, an extension of the weak inversion region was measured before strong inversion, which becomes more pronounced with aging. This increase in the weak inversion region is attributed to electron trapping by oxygen to form negative ions in the MEH-PPV layer. ATR IR spectroscopy shows the formation of carbonyl peak at 1651 cm−1 with aging, which is due to the presence of oxygen. Both the C-V analysis and Attenuated Total Reflection IR Spectroscopy are powerful tools for investigating the degradation of MEH-PPV polymer.

RF noise modeling of Black Phosphorus Junctionless Trench MOSFET in strong inversion region

2019 ◽  
Vol 125 ◽  
pp. 72-79 ◽  
Author(s):  
Ajay Kumar ◽  
Neha Gupta ◽  
M.M. Tripathi ◽  
Rishu Chaujar
Keyword(s):  
Black Phosphorus ◽  
Noise Modeling ◽  
Inversion Region ◽  
Strong Inversion ◽  
Rf Noise
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