Comparison of statistical distributions of random telegraph noise (RTN) in subthreshold region and strong inversion region

In this paper, different physical models of single trap defects are considered, which are localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors. The influence of these defects with different sizes and shapes on the amplitude of the random telegraph noise (RTN) in Junctionless Fin Field Effect Transistor (FinFET) is modelled and simulated. The RTN amplitude dependence on the number of single charges trapped in a single defect is modelled and simulated too. It is found out that the RTN amplitude in the Junctionless FinFET does not depend on the shape, nor on the size of the single defect area. However, the RTN amplitude in the subthreshold region does considerably depend on the number of single charges trapped in the defect.

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A Dual-Point Technique for the Entire ID–VG Characterization Into Subthreshold Region Under Random Telegraph Noise Condition

IEEE Electron Device Letters ◽

10.1109/led.2019.2903516 ◽

2019 ◽

Vol 40 (5) ◽

pp. 674-677 ◽

Cited By ~ 2

Author(s):

Xuepeng Zhan ◽

Chengda Shen ◽

Zhigang Ji ◽

Jiezhi Chen ◽

Hui Fang ◽

...

Keyword(s):

Noise Condition ◽

Subthreshold Region ◽

Random Telegraph Noise ◽

Telegraph Noise

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Extraction of Trap Energy Distribution in Proton-Irradiated Focal Plane Arrays using a High Precision Random Telegraph Noise Detection Algorithm

IEEE Transactions on Instrumentation and Measurement ◽

10.1109/tim.2021.3066543 ◽

2021 ◽

pp. 1-1

Author(s):

Victor D. Pepel ◽

Preston T. Webster ◽

Julie V. Logan ◽

Christian P. Morath

Keyword(s):

Energy Distribution ◽

High Precision ◽

Focal Plane ◽

Detection Algorithm ◽

Focal Plane Arrays ◽

Noise Detection ◽

Random Telegraph Noise ◽

Trap Energy ◽

Telegraph Noise

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Investigation on the amplitude distribution of random telegraph noise (RTN) in nanoscale MOS devices

2016 IEEE International Nanoelectronics Conference (INEC) ◽

10.1109/inec.2016.7589332 ◽

2016 ◽

Cited By ~ 5

Author(s):

Zexuan Zhang ◽

Shaofeng Guo ◽

Xiaobo Jiang ◽

Runsheng Wang ◽

Ru Huang ◽

...

Keyword(s):

Amplitude Distribution ◽

Random Telegraph Noise ◽

Mos Devices ◽

Telegraph Noise

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Design of True Random Number Circuit with Controllable Frequency

Electronics ◽

10.3390/electronics10131517 ◽

2021 ◽

Vol 10 (13) ◽

pp. 1517

Author(s):

Xinsheng Wang ◽

Xiyue Wang

Keyword(s):

Random Number ◽

Noise Source ◽

State Of The Art ◽

Building Blocks ◽

Encryption Algorithm ◽

Random Numbers ◽

Random Number Generators ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

Novel Method

True random number generators (TRNGs) have been a research hotspot due to secure encryption algorithm requirements. Therefore, such circuits are necessary building blocks in state-of-the-art security controllers. In this paper, a TRNG based on random telegraph noise (RTN) with a controllable rate is proposed. A novel method of noise array circuits is presented, which consists of digital decoder circuits and RTN noise circuits. The frequency of generating random numbers is controlled by the speed of selecting different gating signals. The results of simulation show that the array circuits consist of 64 noise source circuits that can generate random numbers by a frequency from 1 kHz to 16 kHz.

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