scholarly journals Approximate analytical channel potential model of poly-Si thin film transistors operated in the strong inversion region under the high gate and low drain biases

2015 ◽  
Vol 574 ◽  
pp. 012100 ◽  
Author(s):  
Zhen Zhu ◽  
Junhao Chu
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Potential Model ◽  
Inversion Region ◽  
Strong Inversion ◽  
Channel Potential ◽  
Si Thin Film

QUASI TWO-DIMENSIONAL ANALYSIS OF THE SURFACE POTENTIAL FOR POLY-Si THIN FILM TRANSISTORS BASED ON THE CHANNEL POTENTIAL

2012 ◽  
Vol 26 (10) ◽  
pp. 1250069 ◽  
Author(s):  
ZHEN ZHU ◽  
JUNHAO CHU
Keyword(s):  
Thin Film ◽  
Dimensional Analysis ◽  
Surface Potential ◽  
Thin Film Transistors ◽  
Potential Model ◽  
Two Dimensional ◽  
Inversion Region ◽  
Strong Inversion ◽  
Channel Potential ◽  
Drain Bias

A quasi two-dimensional analysis of the surface potential for polycrystalline silicon thin film transistors based on the channel potential is developed. Since the drain bias is taken into account, the surface potential model is proposed to approach the surface potential in the two-dimensional device although this model is developed by solving the one-dimensional Poisson's equation. This model is derived under the relative high gate and low drain biases while devices are operated in the strong inversion region. It is obtained by introducing the channel potential expression containing the drain bias and the normalized channel distance. And this channel-potential-based surface potential model is verified by the two-dimensional-device simulator in various gate voltages, various drain voltages and various channel lengths. This model well characterizes the surface potential distribution along the device's channel in the strong inversion region under the relative high gate and low drain biases.

scholarly journals Analytical channel potential model of amorphous InGaZnO thin-film transistors with synchronized symmetric dual-gate

2017 ◽  
Vol 66 (9) ◽  
pp. 097101
Author(s):  
Qin Ting ◽  
Huang Sheng-Xiang ◽  
Liao Cong-Wei ◽  
Yu Tian-Bao ◽  
Deng Lian-Wen
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Potential Model ◽  
Dual Gate ◽  
Channel Potential ◽  
Amorphous Ingazno

Double-metal-gate nanocrystalline Si thin film transistors with flexible threshold voltage controllability

2013 ◽  
Vol 103 (20) ◽  
pp. 203501 ◽  
Author(s):  
Uio-Pu Chiou ◽  
Jia-Min Shieh ◽  
Chih-Chao Yang ◽  
Wen-Hsien Huang ◽  
Yo-Tsung Kao ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Metal Gate ◽  
Si Thin Film ◽  
Nanocrystalline Si

Influence of melt depth in laser crystallized poly-Si thin film transistors

1997 ◽  
Vol 82 (8) ◽  
pp. 4086-4094 ◽  
Author(s):  
S. D. Brotherton ◽  
D. J. McCulloch ◽  
J. P. Gowers ◽  
J. R. Ayres ◽  
M. J. Trainor
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Si Thin Film

Channel doping effects in poly-Si thin film transistors

2005 ◽  
Vol 487 (1-2) ◽  
pp. 242-246 ◽  
Author(s):  
A. Valletta ◽  
L. Mariucci ◽  
A. Bonfiglietti ◽  
G. Fortunato ◽  
S.D. Brotherton
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Doping Effects ◽  
Si Thin Film
Sign in / Sign up

Export Citation Format

Share Document