50-nm Asymmetrically Recessed Metamorphic High-Electron Mobility Transistors With Reduced Source–Drain Spacing: Performance Enhancement and Tradeoffs

2012 ◽  
Vol 59 (1) ◽  
pp. 128-138 ◽  
Author(s):  
Dong Xu ◽  
Xiaoping Yang ◽  
Philip Seekell ◽  
Louis M. Mt. Pleasant ◽  
Lee Mohnkern ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Performance Enhancement ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Drain Spacing ◽  
Electron Mobility Transistors

AlGaN/GaN High Electron Mobility Transistors on Si/SiO2/poly-SiC Substrates

2006 ◽  
Vol 955 ◽  
Author(s):  
Travis Anderson ◽  
Fan Ren ◽  
Lars Voss ◽  
Mark Hlad ◽  
Brent P Gila ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Parameter Extraction ◽  
High Electron ◽  
High Electron Mobility ◽  
Drain Spacing ◽  
Electron Mobility Transistors ◽  
Algan Barrier ◽  
Rf Performance ◽  
Spacing Parameter

ABSTRACTThe dc and rf performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown by Molecular Beam Epitaxy on Si-on-poly (SopSiC) substrates is reported. The HEMT structure incorporated a 7 period GaN/AlN superlattice between the AlGaN barrier and GaN channel for improved carrier confinement. The knee voltage of devices with 2 μm gate-drain spacing was 2.12 V and increased to 3 V at 8 μm spacing. The maximum frequency of oscillation, fMAX, was ∼40 GHz for devices with 0.5 μm gate length and 2 μm gate-drain spacing. Parameter extraction from the measured rf characteristics showed a maximum intrinsic transconductance of 143 mS.mm−1.

Sign in / Sign up

Export Citation Format

Share Document