Effects of Etching Residue on Positive Shift of Threshold Voltage in Amorphous Indium–Zinc-Oxide Thin-Film Transistors Based on Back-Channel-Etch Structure

2014 ◽  
Vol 61 (1) ◽  
pp. 92-97 ◽  
Author(s):  
Dongxiang Luo ◽  
Hua Xu ◽  
Min Li ◽  
Hong Tao ◽  
Lei Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Positive Shift ◽  
Indium Zinc Oxide

Annealing effects on the performances of Bismuth-doped Indium Zinc Oxide thin-film transistors

2019 ◽  
Vol 30 (14) ◽  
pp. 12929-12936
Author(s):  
Dong Lin ◽  
Xudong Zheng ◽  
Jianwen Yang ◽  
Kaiwen Li ◽  
Jingjing Shao ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide ◽  
Annealing Effects

Influence of Illumination on the Negative-Bias Stability of Transparent Hafnium–Indium–Zinc Oxide Thin-Film Transistors

2010 ◽  
Vol 31 (5) ◽  
pp. 440-442 ◽  
Author(s):  
Joon Seok Park ◽  
Tae Sang Kim ◽  
Kyoung Seok Son ◽  
Ji Sim Jung ◽  
Kwang-Hee Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Negative Bias ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide ◽  
Bias Stability
Sign in / Sign up

Export Citation Format

Share Document