Vertical GaN Power Diodes With a Bilayer Edge Termination

IEEE Transactions on Electron Devices ◽

10.1109/ted.2015.2502186 ◽

2016 ◽

Vol 63 (1) ◽

pp. 419-425 ◽

Author(s):

Jeramy R. Dickerson ◽

Andrew A. Allerman ◽

Benjamin N. Bryant ◽

Arthur J. Fischer ◽

Michael P. King ◽

...

Keyword(s):

Power Diodes ◽

Edge Termination ◽

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Wide Bandgap Vertical kV-class β-Ga2O3/GaN Heterojunction p-n Power Diodes with Mesa Edge Termination

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2021.3139565 ◽

2021 ◽

pp. 1-1

Author(s):

Dinusha Herath Mudiyanselage ◽

Dawei Wang ◽

Houqiang Fu

Keyword(s):

Wide Bandgap ◽

Power Diodes ◽

Edge Termination

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Bevel Edge Termination for Vertical GaN Power Diodes

2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) ◽

10.1109/wipda46397.2019.8998835 ◽

2019 ◽

Author(s):

Andrew T. Binder ◽

Jeramy R. Dickerson ◽

Mary H. Crawford ◽

Greg W. Pickrell ◽

Andrew A. Allerman ◽

...

Keyword(s):

Power Diodes ◽

Edge Termination ◽

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High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination

IEEE Electron Device Letters ◽

10.1109/led.2018.2837625 ◽

2018 ◽

Vol 39 (7) ◽

pp. 1018-1021 ◽

Author(s):

Houqiang Fu ◽

Kai Fu ◽

Xuanqi Huang ◽

Hong Chen ◽

Izak Baranowski ◽

...

Keyword(s):

High Performance ◽

Hydrogen Plasma ◽

Power Diodes ◽

Edge Termination

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Implantation-free edge termination structures in vertical GaN power diodes

Semiconductor Science and Technology ◽

10.1088/1361-6641/ab7e43 ◽

2020 ◽

Vol 35 (6) ◽

pp. 065005 ◽

Author(s):

Mohammed Shurrab ◽

Shakti Singh

Keyword(s):

Free Edge ◽

Power Diodes ◽

Edge Termination

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Study on Avalanche Uniformity in 1.2KV GaN Vertical PIN Diode with Bevel Edge-Termination

2021 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps46558.2021.9405165 ◽

2021 ◽

Author(s):

Ke Zeng ◽

Srabanti Chowdhury ◽

Brendan Gunning ◽

Robert Kaplar ◽

Travis Anderson

Keyword(s):

Pin Diode ◽

Edge Termination ◽

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Analysis of Heavy Ion Irradiation Test Results on Power Diodes

2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS) ◽

10.1109/radecs45761.2018.9328674 ◽

2018 ◽

Author(s):

M. Mauguet ◽

L. Azema ◽

E. Le Goulven ◽

A. Varotsou ◽

X. Marie ◽

...

Keyword(s):

Ion Irradiation ◽

Heavy Ion ◽

Test Results ◽

Power Diodes ◽

Heavy Ion Irradiation ◽

Irradiation Test

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A study on free-standing 3C-SiC bipolar power diodes

Applied Physics Letters ◽

10.1063/5.0054433 ◽

2021 ◽

Vol 118 (24) ◽

pp. 242101

Author(s):

Fan Li ◽

Arne Benjamin Renz ◽

Amador Pérez-Tomás ◽

Vishal Shah ◽

Peter Gammon ◽

...

Keyword(s):

Free Standing ◽

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Edge Termination Structures for 3.3 kV 4H-SiC Devices

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia49671.2020.9360283 ◽

2020 ◽

Author(s):

Bi-Fan Dong ◽

Kung-Yen Lee ◽

Yun-Kai Lai ◽

Chen-Dong Tzou ◽

Chih-Chao Hsu ◽

...

Keyword(s):

Edge Termination

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Hybrid simulation of electrode plasmas in high-power diodes

Physics of Plasmas ◽

10.1063/1.3270471 ◽

2009 ◽

Vol 16 (12) ◽

pp. 123102 ◽

Author(s):

Dale R. Welch ◽

David V. Rose ◽

Nichelle Bruner ◽

Robert E. Clark ◽

Bryan V. Oliver ◽

...

Keyword(s):

Hybrid Simulation ◽

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Progress in MOS-controlled bipolar devices and edge termination technologies

Microelectronics Journal ◽

10.1016/s0026-2692(03)00186-1 ◽

2004 ◽

Vol 35 (3) ◽

pp. 235-248 ◽

Author(s):

E.M. Sankara Narayanan ◽

O. Spulber ◽

M. Sweet ◽

J.V.S.C. Bose ◽

K. Verchinine ◽

...

Keyword(s):

Edge Termination ◽

Bipolar Devices

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