A Large-Signal Monolayer Graphene Field-Effect Transistor Compact Model for RF-Circuit Applications

2017 ◽  
Vol 64 (10) ◽  
pp. 4302-4309 ◽  
Author(s):  
Jorge-Daniel Aguirre-Morales ◽  
Sebastien Fregonese ◽  
Chhandak Mukherjee ◽  
Wei Wei ◽  
Henri Happy ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Compact Model ◽  
Monolayer Graphene ◽  
Large Signal ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Rf Circuit

Monolayer Graphene Field Effect Transistor-Based Operational Amplifier

2019 ◽  
Vol 28 (03) ◽  
pp. 1950052
Author(s):  
Ali Safari ◽  
Massoud Dousti ◽  
Mohammad Bagher Tavakoli
Keyword(s):  
Operational Amplifier ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Cmos Technology ◽  
Design System ◽  
Monolayer Graphene ◽  
Characteristic Curves ◽  
Op Amp ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

Graphene Field Effect Transistor (GFET) is a promising candidate for future high performance applications in the beyond CMOS roadmap for analog circuit applications. This paper presents a Verilog-A implementation of a monolayer graphene field-effect transistor (mGFET) model. The study of characteristic curves is carried out using advanced design system (ADS) tools. Validation of the model through comparison with measurements from the characteristic curves is carried out using Silvaco TCAD tools. Finally, the mGFET is used to design a GFET-based operational amplifier (Op-Amp). The GFET Op-Amp performances are tuned in term of the graphene channel length in order to obtain a reasonable gain and bandwidth. The main characteristics of the Op-Amp performance are compared with 0.18[Formula: see text][Formula: see text]m CMOS technology.

scholarly journals RNA Detection Based on Graphene Field-Effect Transistor Biosensor

2018 ◽  
Vol 2018 ◽  
pp. 1-6 ◽  
Author(s):  
Meng Tian ◽  
Shicai Xu ◽  
Junye Zhang ◽  
Xiaoxin Wang ◽  
Zhenhua Li ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Detection Sensitivity ◽  
Monolayer Graphene ◽  
Time Saving ◽  
Fast Analysis ◽  
Rna Detection ◽  
Graphene Field Effect Transistor ◽  
Label Free Detection ◽  
Effect Transistor

Graphene has attracted much attention in biosensing applications due to its unique properties. In this paper, the monolayer graphene was grown by chemical vapor deposition (CVD) method. Using the graphene as the electric channel, we have fabricated a graphene field-effect transistor (G-FET) biosensor that can be used for label-free detection of RNA. Compared with conventional method, the G-FET RNA biosensor can be run in low cost, be time-saving, and be miniaturized for RNA measurement. The sensors show high performance and achieve the RNA detection sensitivity as low as 0.1 fM, which is two orders of magnitude lower than the previously reports. Moreover, the G-FET biosensor can readily distinguish target RNA from noncomplementary RNA, showing high selectivity for RNA detection. The developed G-FET RNA biosensor with high sensitivity, fast analysis speed, and simple operation may provide a new feasible direction for RNA research and biosensing.

Distributed Amplifier Based on Monolayer Graphene Field Effect Transistor

2019 ◽  
Vol 28 (14) ◽  
pp. 1950231
Author(s):  
Ali Safari ◽  
Massoud Dousti ◽  
Mohammad Bagher Tavakoli
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Transport Theory ◽  
Cmos Technology ◽  
Design System ◽  
Monolayer Graphene ◽  
Distributed Amplifier ◽  
Microwave Electronics ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

Due to the ultra-high carrier mobility and ultralow resistivity of Graphene channel, a Graphene field effect transistor (GFET) is an interesting candidate for future RF and microwave electronics. In this paper, the introduction and review of existing compact circuit-level model of GFETs are presented. A compact GFET model based on drift-diffusion transport theory is then implemented in Verilog-A for RF/microwave circuit analysis. Finally, the GFET model is used to design a GFET-based distributed amplifier (DA) using advanced design system (ADS) tools. The simulation results demonstrate a gain of 8[Formula: see text]dB, an input/output return loss less than [Formula: see text]10[Formula: see text]dB, [Formula: see text]3[Formula: see text]dB bandwidth from DC up to 5[Formula: see text]GHz and a dissipation of about 60.45[Formula: see text]mW for a 1.5[Formula: see text]V power supply. The main performance characteristics of the distributed amplifier are compared with 0.18[Formula: see text][Formula: see text]m CMOS technology.

Surface-potential-based physical compact model for graphene field effect transistor

2016 ◽  
Vol 120 (8) ◽  
pp. 084509 ◽  
Author(s):  
Lingfei Wang ◽  
Songang Peng ◽  
Wei Wang ◽  
Guangwei Xu ◽  
Zhuoyu Ji ◽  
...  
Keyword(s):  
Surface Potential ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Compact Model ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

scholarly journals A Physic-Based Explicit Compact Model for Reconfigurable Field-Effect Transistor

IEEE Access ◽  
2021 ◽  
pp. 1-1
Author(s):  
Wangze Ni ◽  
Zhen Dong ◽  
Bairun Huang ◽  
Yichi Zhang ◽  
Zhuojun Chen
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Compact Model ◽  
Effect Transistor
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