scholarly journals A Physic-Based Explicit Compact Model for Reconfigurable Field-Effect Transistor

IEEE Access ◽  
2021 ◽  
pp. 1-1
Author(s):  
Wangze Ni ◽  
Zhen Dong ◽  
Bairun Huang ◽  
Yichi Zhang ◽  
Zhuojun Chen
2017 ◽  
Vol 64 (10) ◽  
pp. 4302-4309 ◽  
Author(s):  
Jorge-Daniel Aguirre-Morales ◽  
Sebastien Fregonese ◽  
Chhandak Mukherjee ◽  
Wei Wei ◽  
Henri Happy ◽  
...  

2003 ◽  
Vol 94 (2) ◽  
pp. 1061-1068 ◽  
Author(s):  
D. Jiménez ◽  
J. J. Sáenz ◽  
B. Iñı́quez ◽  
J. Suñé ◽  
L. F. Marsal ◽  
...  

2010 ◽  
Vol 49 (4) ◽  
pp. 04DN05 ◽  
Author(s):  
Tatsuhiro Numata ◽  
Shigeyasu Uno ◽  
Kazuo Nakazato ◽  
Yoshinari Kamakura ◽  
Nobuya Mori

2021 ◽  
Vol 11 (9) ◽  
pp. 4155
Author(s):  
Jeesoo Chang ◽  
Sungmin Hwang ◽  
Kyungchul Park ◽  
Taejin Jang ◽  
Kyung-Kyu Min ◽  
...  

A systematic device-model calibration (extraction) methodology has been proposed to reduce parameter calibration time of advanced compact model for modern nano-scale semiconductor devices. The adaptive pattern search algorithm is a variant of the direct search method, which explore in the parameter space with adaptive searching step and direction. It is very straightforward, but powerful, in high dimensional optimization problem since adaptive step and direction are decided by simple computation. The proposed method iterates less but shows superior accuracy over the conventional method. It is possible to be applied to a behavioral or empirical model correspond to emerging devices, such as tunneling field-effect transistor (TFET) and negative capacitance field-effect transistor (NCFET) due to its universality in parameter calibration for the model accuracy.


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