Ultrathin Vapor–Liquid–Solid Grown Titanium Dioxide-II Film on Bulk GaAs Substrates for Advanced Metal–Oxide–Semiconductor Device Applications

Oxide Semiconductor ◽

Vapor Liquid Solid ◽

Bulk Gaas ◽

Gaas Substrates ◽

Device Applications ◽

Vapor Liquid

Thin germanium-carbon alloy layers grown directly on silicon for metal-oxide-semiconductor device applications

Applied Physics Letters ◽

10.1063/1.2195008 ◽

2006 ◽

Vol 88 (15) ◽

pp. 152101 ◽

Cited By ~ 15

Author(s):

D. Q. Kelly ◽

I. Wiedmann ◽

J. P. Donnelly ◽

S. V. Joshi ◽

S. Dey ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Oxide Semiconductor ◽

GaAs metal–oxide–semiconductor device with titanium dioxide as dielectric layer: effect of oxide thickness on the device performance

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/44/15/155104 ◽

2011 ◽

Vol 44 (15) ◽

pp. 155104 ◽

Cited By ~ 15

Author(s):

Souvik Kundu ◽

Sandip Kumar Roy ◽

P Banerji

Keyword(s):

Titanium Dioxide ◽

Metal Oxide ◽

Dielectric Layer ◽

Semiconductor Device ◽

Oxide Thickness ◽

Oxide Semiconductor ◽

Device Performance ◽

Layer Effect

Electrical Characteristics of ZrO2Gate Dielectric Deposited on Ultrathin Silicon Capping Layer for SiGe Metal-Oxide-Semiconductor Device Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.5129 ◽

2002 ◽

Vol 41 (Part 1, No. 8) ◽

pp. 5129-5130 ◽

Cited By ~ 3

Author(s):

Sangmoo Choi ◽

Sanghun Jeon ◽

Hyunsang Hwang ◽

Young J. Song ◽

Jung-Wook Lim ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Capping Layer ◽

Electrical Characteristics of TiO2/ZrSixOyStack Gate Dielectric for Metal-Oxide-Semiconductor Device Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.6803 ◽

2001 ◽

Vol 40 (Part 1, No. 12) ◽

pp. 6803-6804 ◽

Cited By ~ 3

Author(s):

Hyunjun Sim ◽

Sanghun Jeon ◽

Hyunsang Hwang

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Device ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Electrical properties of InAlP native oxides for metal–oxide–semiconductor device applications

Applied Physics Letters ◽

10.1063/1.1861981 ◽

2005 ◽

Vol 86 (6) ◽

pp. 062105 ◽

Cited By ~ 22

Author(s):

Y. Cao ◽

J. Zhang ◽

X. Li ◽

T. H. Kosel ◽

P. Fay ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Semiconductor Device ◽

Oxide Semiconductor ◽

Native Oxides ◽

The Role of Rare Earth Metals on Effective Work Function Modulation of Nickel Fully-Silicided Gate/High-kDielectric Stacks for n-Channel Metal Oxide Semiconductor Device Applications

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.011802 ◽

2012 ◽

Vol 51 (1R) ◽

pp. 011802

Author(s):

Bongmook Lee ◽

Steven R. Novak ◽

Nivedita Biswas ◽

Veena Misra

Keyword(s):

Rare Earth ◽

Metal Oxide ◽

Semiconductor Device ◽

Rare Earth Metals ◽

Oxide Semiconductor ◽

Effective Work ◽

Effective Work Function ◽

Electrical characteristics of a TaOxNy/ZrSixOy stack gate dielectric for metal–oxide–semiconductor device applications

Applied Physics Letters ◽

10.1063/1.1427155 ◽

2001 ◽

Vol 79 (26) ◽

pp. 4408-4410 ◽

Cited By ~ 4

Author(s):

Hyungsuk Jung ◽

Hyundoek Yang ◽

Kiju Im ◽

Hyunsang Hwang

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Device ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates

Journal of Applied Physics ◽

10.1063/1.4729331 ◽

2012 ◽

Vol 111 (12) ◽

pp. 124104 ◽

Cited By ~ 14

Author(s):

É. O’Connor ◽

K. Cherkaoui ◽

S. Monaghan ◽

D. O’Connell ◽

I. Povey ◽

...

Keyword(s):

Metal Oxide ◽

Low Frequency ◽

Oxide Semiconductor ◽

Gaas Substrates ◽

Capacitance Voltage

Defects Induced by Deep Preamorphization and Their Effects on Metal Oxide Semiconductor Device Characteristics

Journal of The Electrochemical Society ◽

10.1149/1.1837523 ◽

1997 ◽

Vol 144 (3) ◽

pp. 1020-1024 ◽

Cited By ~ 6

Author(s):

Masayasu Miyake ◽

Mitsutoshi Takahashi

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Oxide Semiconductor

Investigation of band structure at metal-gate/high-k interface of metal oxide semiconductor device with high-k and metal gate stack

2012 12th International Workshop on Junction Technology ◽

10.1109/iwjt.2012.6212837 ◽

2012 ◽

Author(s):

Xiaolei Wang ◽

Wenwu Wang ◽

Kai Han ◽

Hong Yang ◽

Jing Zhang ◽

...

Keyword(s):

Band Structure ◽

Metal Oxide ◽

Semiconductor Device ◽

Oxide Semiconductor ◽

Metal Gate ◽

Gate Stack ◽

High K