Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates

2012 ◽  
Vol 111 (12) ◽  
pp. 124104 ◽  
Author(s):  
É. O’Connor ◽  
K. Cherkaoui ◽  
S. Monaghan ◽  
D. O’Connell ◽  
I. Povey ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Low Frequency ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gaas Substrates ◽  
Capacitance Voltage

High frequency capacitance–voltage characterization of Al2O3/ZrO2/Al2O3 in fully depleted silicon-on-insulator metal–oxide–semiconductor capacitors

2003 ◽  
Vol 83 (25) ◽  
pp. 5238-5240 ◽  
Author(s):  
N. L. Zhang ◽  
Z. T. Song ◽  
Q. W. Shen ◽  
Y. J. Wu ◽  
Q. B. Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
High Frequency ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Fully Depleted ◽  
Capacitance Voltage

Metal–oxide–semiconductor capacitance–voltage characteristics and band offsets for Si1−yCy/Si heterostructures

1998 ◽  
Vol 72 (18) ◽  
pp. 2286-2288 ◽  
Author(s):  
K. Rim ◽  
T. O. Mitchell ◽  
D. V. Singh ◽  
J. L. Hoyt ◽  
J. F. Gibbons ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Band Offsets ◽  
Capacitance Voltage

Low frequency noise in 4H-SiC metal oxide semiconductor field effect transistors

2008 ◽  
Vol 104 (9) ◽  
pp. 094505 ◽  
Author(s):  
S. L. Rumyantsev ◽  
M. S. Shur ◽  
M. E. Levinshtein ◽  
P. A. Ivanov ◽  
J. W. Palmour ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Frequency Noise ◽  
Low Frequency Noise

Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures

2007 ◽  
Vol 91 (13) ◽  
pp. 133510 ◽  
Author(s):  
Guy Brammertz ◽  
Koen Martens ◽  
Sonja Sioncke ◽  
Annelies Delabie ◽  
Matty Caymax ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Capacitance Voltage

Hole Trapping in the NBTI Characteristic of SiC MOSFETs

2018 ◽  
Vol 924 ◽  
pp. 667-670
Author(s):  
Yan Jing He ◽  
Hong Liang Lv ◽  
Xiao Yan Tang ◽  
Qing Wen Song ◽  
Yi Meng Zhang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Threshold Voltage Shift ◽  
Hole Trapping ◽  
Primary Mechanism ◽  
Capacitance Voltage ◽  
Cv Measurements ◽  
P Type

P-type implanted metal oxide semiconductor capacitors (MOSCAPs) and metal oxide semiconductor field effect transistors (MOSFETs) have been fabricated. The characteristics of hole trapping at the interface of SiO2/SiC are investigated through capacitance-voltage (CV) measurements with different starting voltages. The negative shift voltage ∆Vshift and the hysteresis voltages ∆VH which caused by the hole traps in the MOSCAPs and MOSFETs are extracted from CV results. The results show that the hole traps extracted from MOSCAPs are larger than the that extracted from the threshold voltage shift in the MOSFETs. It suggests holes trapping are the primary mechanism contributing to the NBTI, but not all the holes work. Part of the hole traps are compensation by sufficient electrons in the MOSFET structure.

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