scholarly journals A Comparative Study on the Electrical Properties of Vertical ( $\bar{\sf2}01$ ) and (010) $\beta$ -Ga2O3 Schottky Barrier Diodes on EFG Single-Crystal Substrates

2018 ◽  
Vol 65 (8) ◽  
pp. 3507-3513 ◽  
Author(s):  
Houqiang Fu ◽  
Hong Chen ◽  
Xuanqi Huang ◽  
Izak Baranowski ◽  
Jossue Montes ◽  
...  
2019 ◽  
Vol 40 (1) ◽  
pp. 012801 ◽  
Author(s):  
Tsung-Han Yang ◽  
Houqiang Fu ◽  
Hong Chen ◽  
Xuanqi Huang ◽  
Jossue Montes ◽  
...  

1998 ◽  
Vol 37 (Part 2, No. 1A/B) ◽  
pp. L10-L12 ◽  
Author(s):  
Stewart A. Goodman ◽  
F. Danie Auret ◽  
Prakash N. K. Deenapanray ◽  
Gerrit Myburg

2019 ◽  
Author(s):  
T. Hanada ◽  
H. Umezawa ◽  
S. Ohmagari ◽  
D. Takeuchi ◽  
J.Higedon Kaneko

2005 ◽  
Vol 14 (3-7) ◽  
pp. 499-503 ◽  
Author(s):  
M. Brezeanu ◽  
S.J. Rashid ◽  
T. Butler ◽  
N.L. Rupesinghe ◽  
F. Udrea ◽  
...  

Coatings ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 206
Author(s):  
Jinhee Park ◽  
You Seung Rim ◽  
Pradeep Senanayake ◽  
Jiechen Wu ◽  
Dwight Streit

The characterization of defect states in a hydrothermally grown single crystal of ZnO was performed using deep-level transient spectroscopy in the temperature range of 77–340 K. The native intrinsic defect energy level within the ZnO band gap occurred in the depletion region of ZnO Schottky barrier diodes. A major defect level was observed, with a thermal activation energy of 0.27 eV (E3) within the defect state distribution from 0.1 to 0.57 eV below the conduction band minimum. We confirmed the maximum defect concentration to be 3.66 × 1016 cm−3 at 0.27 eV (E3). As a result, we clearly confirmed the distribution of density of defect states in the ZnO band gap.


2017 ◽  
Vol 28 (9) ◽  
pp. 6413-6420 ◽  
Author(s):  
Gülçin Ersöz ◽  
İbrahim Yücedağ ◽  
Sümeyye Bayrakdar ◽  
Şemsettin Altındal ◽  
Ahmet Gümüş

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