scholarly journals A Comparative Study on the Electrical Properties of Vertical ( $\bar{\sf2}01$ ) and (010) $\beta$ -Ga2O3 Schottky Barrier Diodes on EFG Single-Crystal Substrates

2018 ◽  
Vol 65 (8) ◽  
pp. 3507-3513 ◽  
Author(s):  
Houqiang Fu ◽  
Hong Chen ◽  
Xuanqi Huang ◽  
Izak Baranowski ◽  
Jossue Montes ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Comparative Study ◽  
Single Crystal ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes

Temperature-dependent electrical properties of β-Ga2O3 Schottky barrier diodes on highly doped single-crystal substrates

2019 ◽  
Vol 40 (1) ◽  
pp. 012801 ◽  
Author(s):  
Tsung-Han Yang ◽  
Houqiang Fu ◽  
Hong Chen ◽  
Xuanqi Huang ◽  
Jossue Montes ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Temperature Dependent

Electrical Properties of Sc Schottky Barrier Diodes Fabricated on Argon-Ion Sputtered p-GaAs

1998 ◽  
Vol 37 (Part 2, No. 1A/B) ◽  
pp. L10-L12 ◽  
Author(s):  
Stewart A. Goodman ◽  
F. Danie Auret ◽  
Prakash N. K. Deenapanray ◽  
Gerrit Myburg
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Argon Ion

Diamond Schottky barrier diodes on half-inch single-crystal wafers fabricated by Minimal Fab System

2019 ◽  
Author(s):  
T. Hanada ◽  
H. Umezawa ◽  
S. Ohmagari ◽  
D. Takeuchi ◽  
J.Higedon Kaneko
Keyword(s):  
Single Crystal ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes

Optically triggered Schottky barrier diodes in single crystal diamond

2005 ◽  
Vol 14 (3-7) ◽  
pp. 499-503 ◽  
Author(s):  
M. Brezeanu ◽  
S.J. Rashid ◽  
T. Butler ◽  
N.L. Rupesinghe ◽  
F. Udrea ◽  
...  
Keyword(s):  
Single Crystal ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Single Crystal Diamond

scholarly journals Electrical Defect State Distribution in Single Crystal ZnO Schottky Barrier Diodes

Coatings ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 206
Author(s):  
Jinhee Park ◽  
You Seung Rim ◽  
Pradeep Senanayake ◽  
Jiechen Wu ◽  
Dwight Streit
Keyword(s):  
Single Crystal ◽  
Band Gap ◽  
Schottky Barrier ◽  
Deep Level ◽  
Depletion Region ◽  
Intrinsic Defect ◽  
Defect State ◽  
Schottky Barrier Diodes ◽  
Defect States ◽  
State Distribution

The characterization of defect states in a hydrothermally grown single crystal of ZnO was performed using deep-level transient spectroscopy in the temperature range of 77–340 K. The native intrinsic defect energy level within the ZnO band gap occurred in the depletion region of ZnO Schottky barrier diodes. A major defect level was observed, with a thermal activation energy of 0.27 eV (E3) within the defect state distribution from 0.1 to 0.57 eV below the conduction band minimum. We confirmed the maximum defect concentration to be 3.66 × 1016 cm−3 at 0.27 eV (E3). As a result, we clearly confirmed the distribution of density of defect states in the ZnO band gap.

Investigation of photo-induced effect on electrical properties of Au/PPy/n-Si (MPS) type schottky barrier diodes

2017 ◽  
Vol 28 (9) ◽  
pp. 6413-6420 ◽  
Author(s):  
Gülçin Ersöz ◽  
İbrahim Yücedağ ◽  
Sümeyye Bayrakdar ◽  
Şemsettin Altındal ◽  
Ahmet Gümüş
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes
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