Insight into Buffer Trap-Induced Current Saturation and Current Collapse in GaN RF Heterojunction Field-Effect Transistors

The current collapse of normally-off mode AlGaN/GaN/AlGaN double heterojunction field effect transistors was investigated in comparison with the normal AlGaN/GaN heterojunction filed effect transistors.

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Current collapse in GaN heterojunction field effect transistors for high-voltage switching applications

2014 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2014.6861112 ◽

2014 ◽

Cited By ~ 20

Author(s):

Jungwoo Joh ◽

Naveen Tipirneni ◽

Sameer Pendharkar ◽

Srikanth Krishnan

Keyword(s):

High Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Current Collapse ◽

Heterojunction Field Effect Transistors ◽

Voltage Switching

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Response to “Comment on ‘Carrier trapping and current collapse mechanism in GaN metal-semiconductor field effect transistors’ ” [Appl. Phys. Lett. 86, 016101 (2005)]

Applied Physics Letters ◽

10.1063/1.1844604 ◽

2005 ◽

Vol 86 (1) ◽

pp. 016102

Author(s):

A. F. M. Anwar ◽

Syed S. Islam ◽

Richard T. Webster

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Collapse Mechanism ◽

Carrier Trapping ◽

Current Collapse

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Polythiophene–perylene diimide heterojunction field-effect transistors

Journal of Materials Chemistry C ◽

10.1039/c3tc00562c ◽

2013 ◽

Vol 1 (13) ◽

pp. 2433 ◽

Cited By ~ 28

Author(s):

Sreenivasa Reddy Puniredd ◽

Adam Kiersnowski ◽

Glauco Battagliarin ◽

Wojciech Zajączkowski ◽

Wallace W. H. Wong ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Perylene Diimide ◽

Heterojunction Field Effect Transistors

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SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06ka03 ◽

2018 ◽

Vol 57 (6S3) ◽

pp. 06KA03

Author(s):

Kenta Watanabe ◽

Daiki Terashima ◽

Mikito Nozaki ◽

Takahiro Yamada ◽

Satoshi Nakazawa ◽

...

Keyword(s):

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Heterojunction Field Effect Transistors

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Degradation in AlGaN/GaN heterojunction field effect transistors upon electrical stress: Effects of field and temperature

Applied Physics Letters ◽

10.1063/1.4826324 ◽

2013 ◽

Vol 103 (16) ◽

pp. 163504 ◽

Cited By ~ 3

Author(s):

C. Y. Zhu ◽

F. Zhang ◽

R. A. Ferreyra ◽

V. Avrutin ◽

Ü. Özgür ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Stress Effects ◽

Electrical Stress ◽

Heterojunction Field Effect Transistors

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Anomalous behavior of AlGaN∕GaN heterostructure field-effect transistors at cryogenic temperatures: From current collapse to current enhancement with cooling

Applied Physics Letters ◽

10.1063/1.2715032 ◽

2007 ◽

Vol 90 (12) ◽

pp. 123505 ◽

Cited By ~ 20

Author(s):

H. F. Sun ◽

C. R. Bolognesi

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Anomalous Behavior ◽

Cryogenic Temperatures ◽

Current Collapse ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Original Demonstration of Depletion-Mode and Enhancement-Mode AlGaN/GaN Heterojunction Field-Effect Transistors

Gallium Nitride Power Devices ◽

10.1201/9781315196626-5 ◽

2017 ◽

pp. 111-143

Author(s):

Zhigang Wang ◽

Bing Wang

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Enhancement Mode ◽

Heterojunction Field Effect Transistors

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Modulation-doped GaAs/AlGaAs heterojunction field-effect transistors (MODFET's), ultrahigh-speed device for supercomputers

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1984.21654 ◽

1984 ◽

Vol 31 (8) ◽

pp. 1015-1027 ◽

Cited By ~ 127

Author(s):

P.M. Solomon ◽

H. Morkoc

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Heterojunction Field Effect Transistors

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