Single-Event Damage-Induced Gate-Leakage Mechanisms in AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 1-6
Author(s):  
Shaozhong Yue ◽  
Zhangang Zhang ◽  
Ziwen Chen ◽  
Xuefeng Zheng ◽  
Lei Wang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Single Event ◽  
Gate Leakage ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Single-Event Transient Sensitivity of InAlSb/InAs/AlGaSb High Electron Mobility Transistors

2012 ◽  
Vol 59 (6) ◽  
pp. 2691-2696 ◽  
Author(s):  
V. Ramachandran ◽  
R. A. Reed ◽  
R. D. Schrimpf ◽  
D. McMorrow ◽  
J. Brad Boos ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Single Event ◽  
Single Event Transient ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors

2012 ◽  
Vol 101 (25) ◽  
pp. 253519 ◽  
Author(s):  
Satyaki Ganguly ◽  
Aniruddha Konar ◽  
Zongyang Hu ◽  
Huili Xing ◽  
Debdeep Jena
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Gate Leakage ◽  
High Electron Mobility ◽  
Polarization Effects ◽  
Electron Mobility Transistors
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