Reduced Reverse Gate Leakage Current for p‐GaN Gate High‐Electron‐Mobility Transistors by a Surface‐Etching Method

2021 ◽  
pp. 2000666
Author(s):  
Chi Sun ◽  
Xiaoyu Ding ◽  
Xing Wei ◽  
Wenxin Tang ◽  
Xiaodong Zhang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
High Electron Mobility ◽  
Surface Etching ◽  
Electron Mobility Transistors ◽  
Etching Method

Large Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors

2002 ◽  
Vol 41 (Part 1, No. 8) ◽  
pp. 5125-5126 ◽  
Author(s):  
Shinya Mizuno ◽  
Yutaka Ohno ◽  
Shigeru Kishimoto ◽  
Koichi Maezawa ◽  
Takashi Mizutani
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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