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Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors
Applied Physics Letters
◽
10.1063/1.1579852
◽
2003
◽
Vol 82
(22)
◽
pp. 3976-3978
◽
Cited By ~ 94
Author(s):
Shreepad Karmalkar
◽
D. Mahaveer Sathaiya
◽
M. S. Shur
Keyword(s):
Electron Mobility
◽
High Electron Mobility Transistors
◽
High Electron
◽
Gate Leakage
◽
High Electron Mobility
◽
Electron Mobility Transistors
Download Full-text
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Single-Event Damage-Induced Gate-Leakage Mechanisms in AlGaN/GaN High-Electron-Mobility Transistors
IEEE Transactions on Electron Devices
◽
10.1109/ted.2021.3075667
◽
2021
◽
pp. 1-6
Author(s):
Shaozhong Yue
◽
Zhangang Zhang
◽
Ziwen Chen
◽
Xuefeng Zheng
◽
Lei Wang
◽
...
Keyword(s):
Electron Mobility
◽
High Electron Mobility Transistors
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High Electron
◽
Single Event
◽
Gate Leakage
◽
High Electron Mobility
◽
Electron Mobility Transistors
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Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors
Applied Physics Letters
◽
10.1063/1.1953873
◽
2005
◽
Vol 86
(25)
◽
pp. 253511
◽
Cited By ~ 21
Author(s):
P. Kordoš
◽
J. Bernát
◽
M. Marso
◽
H. Lüth
◽
F. Rampazzo
◽
...
Keyword(s):
Leakage Current
◽
Electron Mobility
◽
Drain Current
◽
High Electron Mobility Transistors
◽
High Electron
◽
Gate Leakage Current
◽
Gate Leakage
◽
High Electron Mobility
◽
Electron Mobility Transistors
◽
Current Collapse
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Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer
Nanoscience and Nanotechnology Letters
◽
10.1166/nnl.2018.2601
◽
2018
◽
Vol 10
(2)
◽
pp. 185-189
◽
Cited By ~ 1
Author(s):
Meilan Hao
◽
Quan Wang
◽
Lijuan Jiang
◽
Chun Feng
◽
Changxi Chen
◽
...
Keyword(s):
Electron Mobility
◽
High Electron Mobility Transistors
◽
High Electron
◽
Gate Leakage
◽
High Electron Mobility
◽
Electron Mobility Transistors
Download Full-text
Direct Observation of Gate Leakage Paths in AlGaN/GaN High Electron Mobility Transistors by Electron Beam–Induced Current
IEEE Transactions on Device and Materials Reliability
◽
10.1109/tdmr.2018.2847664
◽
2018
◽
Vol 18
(3)
◽
pp. 359-363
◽
Cited By ~ 1
Author(s):
Lixiang Chen
◽
Xiaohua Ma
◽
Jiejie Zhu
◽
Bin Hou
◽
Qing Zhu
◽
...
Keyword(s):
Electron Beam
◽
Direct Observation
◽
Electron Mobility
◽
High Electron Mobility Transistors
◽
High Electron
◽
Induced Current
◽
Gate Leakage
◽
High Electron Mobility
◽
Electron Mobility Transistors
◽
Electron Beam Induced Current
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Modeling of the reverse gate leakage in AlGaN/GaN high electron mobility transistors
Journal of Applied Physics
◽
10.1063/1.3340826
◽
2010
◽
Vol 107
(6)
◽
pp. 064501
◽
Cited By ~ 14
Author(s):
S. Sudharsanan
◽
Shreepad Karmalkar
Keyword(s):
Electron Mobility
◽
High Electron Mobility Transistors
◽
High Electron
◽
Gate Leakage
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High Electron Mobility
◽
Electron Mobility Transistors
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Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors
Applied Physics Letters
◽
10.1063/1.4871802
◽
2014
◽
Vol 104
(15)
◽
pp. 153510
◽
Cited By ~ 23
Author(s):
Jie-Jie Zhu
◽
Xiao-Hua Ma
◽
Bin Hou
◽
Wei-Wei Chen
◽
Yue Hao
Keyword(s):
Metal Oxide
◽
Electron Mobility
◽
High Electron Mobility Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
High Electron
◽
Gate Leakage
◽
High Electron Mobility
◽
Electron Mobility Transistors
◽
Leakage Mechanism
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Reduced Reverse Gate Leakage Current for p‐GaN Gate High‐Electron‐Mobility Transistors by a Surface‐Etching Method
physica status solidi (a)
◽
10.1002/pssa.202000666
◽
2021
◽
pp. 2000666
Author(s):
Chi Sun
◽
Xiaoyu Ding
◽
Xing Wei
◽
Wenxin Tang
◽
Xiaodong Zhang
◽
...
Keyword(s):
Leakage Current
◽
Electron Mobility
◽
High Electron Mobility Transistors
◽
High Electron
◽
Gate Leakage Current
◽
Gate Leakage
◽
High Electron Mobility
◽
Surface Etching
◽
Electron Mobility Transistors
◽
Etching Method
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Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors
Applied Physics Letters
◽
10.1063/1.4773244
◽
2012
◽
Vol 101
(25)
◽
pp. 253519
◽
Cited By ~ 42
Author(s):
Satyaki Ganguly
◽
Aniruddha Konar
◽
Zongyang Hu
◽
Huili Xing
◽
Debdeep Jena
Keyword(s):
Electron Mobility
◽
High Electron Mobility Transistors
◽
High Electron
◽
Gate Leakage
◽
High Electron Mobility
◽
Polarization Effects
◽
Electron Mobility Transistors
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On reverse gate leakage current of GaN high electron mobility transistors on silicon substrate
Applied Physics Letters
◽
10.1063/1.4798257
◽
2013
◽
Vol 102
(11)
◽
pp. 113510
◽
Cited By ~ 27
Author(s):
Ling Xia
◽
Allen Hanson
◽
Timothy Boles
◽
Donghyun Jin
Keyword(s):
Leakage Current
◽
Electron Mobility
◽
Silicon Substrate
◽
High Electron Mobility Transistors
◽
High Electron
◽
Gate Leakage Current
◽
Gate Leakage
◽
High Electron Mobility
◽
Electron Mobility Transistors
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Modeling negative and positive temperature dependence of the gate leakage current in GaN high‐electron mobility transistors
ETRI Journal
◽
10.4218/etrij.2021-0070
◽
2022
◽
Author(s):
Ling‐Feng Mao
Keyword(s):
Temperature Dependence
◽
Leakage Current
◽
Electron Mobility
◽
High Electron Mobility Transistors
◽
Positive Temperature
◽
High Electron
◽
Gate Leakage Current
◽
Gate Leakage
◽
High Electron Mobility
◽
Electron Mobility Transistors
Download Full-text
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