Direct Observation of Gate Leakage Paths in AlGaN/GaN High Electron Mobility Transistors by Electron Beam–Induced Current

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2018.2847664 ◽

2018 ◽

Vol 18 (3) ◽

pp. 359-363 ◽

Author(s):

Lixiang Chen ◽

Xiaohua Ma ◽

Jiejie Zhu ◽

Bin Hou ◽

Qing Zhu ◽

...

Keyword(s):

Electron Beam ◽

Direct Observation ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Induced Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Electron Beam Induced Current

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Single-Event Damage-Induced Gate-Leakage Mechanisms in AlGaN/GaN High-Electron-Mobility Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3075667 ◽

2021 ◽

pp. 1-6

Author(s):

Shaozhong Yue ◽

Zhangang Zhang ◽

Ziwen Chen ◽

Xuefeng Zheng ◽

Lei Wang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Single Event ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.1953873 ◽

2005 ◽

Vol 86 (25) ◽

pp. 253511 ◽

Author(s):

P. Kordoš ◽

J. Bernát ◽

M. Marso ◽

H. Lüth ◽

F. Rampazzo ◽

...

Keyword(s):

Leakage Current ◽

Electron Mobility ◽

Drain Current ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Defect Analysis of High Electron Mobility Transistors Using a Scanning Electron and Laser Beams Induced Current (SELBIC) System

Transactions of The Japan Institute of Electronics Packaging ◽

10.5104/jiepeng.1.25 ◽

2008 ◽

Vol 1 (1) ◽

pp. 25-28 ◽

Author(s):

Haruki Sueyoshi ◽

Shin-ichi Takasu ◽

Woon Choi ◽

Hajime Tomokage

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Laser Beams ◽

High Electron ◽

Induced Current ◽

Defect Analysis ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Scanning Electron

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Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer

Nanoscience and Nanotechnology Letters ◽

10.1166/nnl.2018.2601 ◽

2018 ◽

Vol 10 (2) ◽

pp. 185-189 ◽

Author(s):

Meilan Hao ◽

Quan Wang ◽

Lijuan Jiang ◽

Chun Feng ◽

Changxi Chen ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Investigation of surface traps-induced current collapse phenomenon in AlGaN/GaN high electron mobility transistors with schottky gate structures

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/aad455 ◽

2018 ◽

Vol 51 (34) ◽

pp. 345102 ◽

Author(s):

Huolin Huang ◽

Zhonghao Sun ◽

Yaqing Cao ◽

Feiyu Li ◽

Feng Zhang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Induced Current ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Reduction of Gate Leakage Current on AlGaN/GaN High Electron Mobility Transistors by Electron-Beam Irradiation

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2013.6987 ◽

2013 ◽

Vol 13 (3) ◽

pp. 1738-1740 ◽

Author(s):

S. K. Oh ◽

C. G. Song ◽

T. Jang ◽

Kwang-Choong Kim ◽

Y. J. Jo ◽

...

Keyword(s):

Electron Beam ◽

Leakage Current ◽

Electron Mobility ◽

Electron Beam Irradiation ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Beam Irradiation ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Modeling of the reverse gate leakage in AlGaN/GaN high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.3340826 ◽

2010 ◽

Vol 107 (6) ◽

pp. 064501 ◽

Author(s):

S. Sudharsanan ◽

Shreepad Karmalkar

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors

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An Investigation of Carbon-Doping-Induced Current Collapse in GaN-on-Si High Electron Mobility Transistors

Electronics ◽

10.3390/electronics5020028 ◽

2016 ◽

Vol 5 (4) ◽

pp. 28 ◽

Author(s):

An-Jye Tzou ◽

Dan-Hua Hsieh ◽

Szu-Hung Chen ◽

Yu-Kuang Liao ◽

Zhen-Yu Li ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Carbon Doping ◽

High Electron ◽

Induced Current ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse ◽

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Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4871802 ◽

2014 ◽

Vol 104 (15) ◽

pp. 153510 ◽

Author(s):

Jie-Jie Zhu ◽

Xiao-Hua Ma ◽

Bin Hou ◽

Wei-Wei Chen ◽

Yue Hao

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Leakage Mechanism

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Reduced Reverse Gate Leakage Current for p‐GaN Gate High‐Electron‐Mobility Transistors by a Surface‐Etching Method

physica status solidi (a) ◽

10.1002/pssa.202000666 ◽

2021 ◽

pp. 2000666

Author(s):

Chi Sun ◽

Xiaoyu Ding ◽

Xing Wei ◽

Wenxin Tang ◽

Xiaodong Zhang ◽

...

Keyword(s):

Leakage Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Surface Etching ◽

Electron Mobility Transistors ◽

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