Comments on ``Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)''

2021 ◽  
pp. 1-1
Author(s):  
Barak Hoffer ◽  
Vikas Rana ◽  
Stephan Menzel ◽  
Rainer Waser ◽  
Shahar Kvatinsky
Keyword(s):  
Experimental Demonstration ◽  
Valence Change ◽  
Change Memory

scholarly journals Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)

2020 ◽  
Vol 67 (8) ◽  
pp. 3115-3122 ◽  
Author(s):  
Barak Hoffer ◽  
Vikas Rana ◽  
Stephan Menzel ◽  
Rainer Waser ◽  
Shahar Kvatinsky
Keyword(s):  
Experimental Demonstration ◽  
Valence Change ◽  
Change Memory

Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory

2017 ◽  
Vol 9 (12) ◽  
pp. 10820-10824 ◽  
Author(s):  
Umberto Celano ◽  
Jonathan Op de Beeck ◽  
Sergiu Clima ◽  
Michael Luebben ◽  
Paul M. Koenraad ◽  
...  
Keyword(s):  
Layer Interface ◽  
Valence Change ◽  
Change Memory

Moisture effects on the electrochemical reaction and resistance switching at Ag/molybdenum oxide interfaces

2016 ◽  
Vol 18 (18) ◽  
pp. 12466-12475 ◽  
Author(s):  
Chuan-Sen Yang ◽  
Da-Shan Shang ◽  
Yi-Sheng Chai ◽  
Li-Qin Yan ◽  
Bao-Gen Shen ◽  
...  
Keyword(s):  
Electrochemical Reaction ◽  
Mode Transition ◽  
Pourbaix Diagram ◽  
Oxide Interfaces ◽  
Electrochemical Processes ◽  
Moisture Effects ◽  
Valence Change ◽  
Switching Mode ◽  
Change Memory

The crucial role of ambient moisture in the electrochemical processes and switching mode transition from electrochemical metallization memory (ECM) to valence change memory (VCM) is clarified based on the Pourbaix diagram for the Ag–H2O system and the Mo5+/Mo6+valence change.

Evaluating gallium-doped ZnO top electrode thickness for achieving a good switch-ability in ZnO2/ZnO bilayer transparent valence change memory

2021 ◽  
Author(s):  
Firman Mangasa Simanjuntak ◽  
Debashis Panda ◽  
Sridhar Chandrasekaran ◽  
Rakesh Aluguri ◽  
Chun-Chieh Lin ◽  
...  
Keyword(s):  
Electrode Thickness ◽  
Doped Zno ◽  
Valence Change ◽  
Change Memory

Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element

2015 ◽  
Vol 62 (11) ◽  
pp. 3498-3507 ◽  
Author(s):  
Geoffrey W. Burr ◽  
Robert M. Shelby ◽  
Severin Sidler ◽  
Carmelo di Nolfo ◽  
Junwoo Jang ◽  
...  
Keyword(s):  
Neural Network ◽  
Phase Change ◽  
Large Scale ◽  
Synaptic Weight ◽  
Phase Change Memory ◽  
Experimental Demonstration ◽  
Change Memory

scholarly journals Switching and synaptic characteristics of AZO/ZnO/ITO valence change memory device

2019 ◽  
Vol 494 ◽  
pp. 012027
Author(s):  
F M Simanjuntak ◽  
S Chandrasekaran ◽  
F Gapsari ◽  
T Y Tseng
Keyword(s):  
Memory Device ◽  
Valence Change ◽  
Change Memory

Integrating Phase-Change Memory Cell With Ge Nanowire Diode for Crosspoint Memory—Experimental Demonstration and Analysis

2008 ◽  
Vol 55 (9) ◽  
pp. 2307-2313 ◽  
Author(s):  
SangBum Kim ◽  
Yuan Zhang ◽  
J.P. McVittie ◽  
H. Jagannathan ◽  
Y. Nishi ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cell ◽  
Experimental Demonstration ◽  
Change Memory

scholarly journals Experimental Demonstration of Supervised Learning in Spiking Neural Networks with Phase-Change Memory Synapses

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
S. R. Nandakumar ◽  
Irem Boybat ◽  
Manuel Le Gallo ◽  
Evangelos Eleftheriou ◽  
Abu Sebastian ◽  
...  
Keyword(s):  
Neural Networks ◽  
Phase Change ◽  
Supervised Learning ◽  
Phase Change Memory ◽  
Spiking Neural Networks ◽  
Experimental Demonstration ◽  
Change Memory
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