Evaluating gallium-doped ZnO top electrode thickness for achieving a good switch-ability in ZnO2/ZnO bilayer transparent valence change memory

2021 ◽  
Author(s):  
Firman Mangasa Simanjuntak ◽  
Debashis Panda ◽  
Sridhar Chandrasekaran ◽  
Rakesh Aluguri ◽  
Chun-Chieh Lin ◽  
...  
Keyword(s):  
Electrode Thickness ◽  
Doped Zno ◽  
Valence Change ◽  
Change Memory

Multilevel Resistive-Change Memory Operation of Al-Doped ZnO Thin-Film Transistor

2016 ◽  
Vol 37 (8) ◽  
pp. 1014-1017 ◽  
Author(s):  
Won-Ho Lee ◽  
Eom-Ji Kim ◽  
Sung-Min Yoon
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Zno Thin Film ◽  
Doped Zno ◽  
Change Memory

Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory

2017 ◽  
Vol 9 (12) ◽  
pp. 10820-10824 ◽  
Author(s):  
Umberto Celano ◽  
Jonathan Op de Beeck ◽  
Sergiu Clima ◽  
Michael Luebben ◽  
Paul M. Koenraad ◽  
...  
Keyword(s):  
Layer Interface ◽  
Valence Change ◽  
Change Memory

Moisture effects on the electrochemical reaction and resistance switching at Ag/molybdenum oxide interfaces

2016 ◽  
Vol 18 (18) ◽  
pp. 12466-12475 ◽  
Author(s):  
Chuan-Sen Yang ◽  
Da-Shan Shang ◽  
Yi-Sheng Chai ◽  
Li-Qin Yan ◽  
Bao-Gen Shen ◽  
...  
Keyword(s):  
Electrochemical Reaction ◽  
Mode Transition ◽  
Pourbaix Diagram ◽  
Oxide Interfaces ◽  
Electrochemical Processes ◽  
Moisture Effects ◽  
Valence Change ◽  
Switching Mode ◽  
Change Memory

The crucial role of ambient moisture in the electrochemical processes and switching mode transition from electrochemical metallization memory (ECM) to valence change memory (VCM) is clarified based on the Pourbaix diagram for the Ag–H2O system and the Mo5+/Mo6+valence change.

Comments on ``Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)''

2021 ◽  
pp. 1-1
Author(s):  
Barak Hoffer ◽  
Vikas Rana ◽  
Stephan Menzel ◽  
Rainer Waser ◽  
Shahar Kvatinsky
Keyword(s):  
Experimental Demonstration ◽  
Valence Change ◽  
Change Memory

scholarly journals Switching and synaptic characteristics of AZO/ZnO/ITO valence change memory device

2019 ◽  
Vol 494 ◽  
pp. 012027
Author(s):  
F M Simanjuntak ◽  
S Chandrasekaran ◽  
F Gapsari ◽  
T Y Tseng
Keyword(s):  
Memory Device ◽  
Valence Change ◽  
Change Memory

scholarly journals Scalability of valence change memory: From devices to tip-induced filaments

AIP Advances ◽  
2016 ◽  
Vol 6 (8) ◽  
pp. 085009 ◽  
Author(s):  
U. Celano ◽  
A. Fantini ◽  
R. Degraeve ◽  
M. Jurczak ◽  
L. Goux ◽  
...  
Keyword(s):  
Valence Change ◽  
Change Memory

scholarly journals Imaging Dielectric Breakdown in Valence Change Memory (Adv. Funct. Mater. 2/2022)

2022 ◽  
Vol 32 (2) ◽  
pp. 2270012
Author(s):  
William A. Hubbard ◽  
Jared J. Lodico ◽  
Ho Leung Chan ◽  
Matthew Mecklenburg ◽  
Brian C. Regan
Keyword(s):  
Dielectric Breakdown ◽  
Valence Change ◽  
Change Memory

Role of temperature in valence change memory devices

2018 ◽  
Vol 326 ◽  
pp. 159-165
Author(s):  
Ron Lidji Liraz ◽  
Dmitri Kalaev ◽  
Dan Ritter ◽  
Ilan Riess
Keyword(s):  
Memory Devices ◽  
Valence Change ◽  
Change Memory
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