Self-Aligned Double Injection-Function TFT for Deep Sub-Micrometer Channels' Length-Application to Solution-Processed Indium Gallium Zinc Oxide

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3138361 ◽

2022 ◽

pp. 1-6

Author(s):

Gil Sheleg ◽

Nir Tessler

Keyword(s):

Indium Gallium Zinc Oxide ◽

Solution Processed ◽

Double Injection ◽

Indium Gallium ◽

Injection Function

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Flexible Thin Film Transistor (TFT) and Circuits for Internet of Things (IoT) based on Solution Processed Indium Gallium Zinc Oxide (IGZO)

10.1109/ifetc49530.2021.9580506 ◽

2021 ◽

Author(s):

Sagar R. Bhalerao ◽

Donald Lupo ◽

Paul R. Berger

Keyword(s):

Thin Film ◽

Internet Of Things ◽

Thin Film Transistor ◽

Indium Gallium Zinc Oxide ◽

Solution Processed ◽

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Artificially Fabricated Subgap States for Visible-Light Absorption in Indium–Gallium–Zinc Oxide Phototransistor with Solution-Processed Oxide Absorption Layer

ACS Applied Materials & Interfaces ◽

10.1021/acsami.9b14154 ◽

2019 ◽

Vol 11 (42) ◽

pp. 38964-38972 ◽

Author(s):

Jusung Chung ◽

Young Jun Tak ◽

Won-Gi Kim ◽

Byung Ha Kang ◽

Hyun Jae Kim

Keyword(s):

Visible Light ◽

Light Absorption ◽

Indium Gallium Zinc Oxide ◽

Solution Processed ◽

Visible Light Absorption ◽

Absorption Layer ◽

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Flexible substrate compatible solution processed P-N heterojunction diodes with indium-gallium-zinc oxide and copper oxide

Materials Science and Engineering B ◽

10.1016/j.mseb.2017.02.003 ◽

2017 ◽

Vol 218 ◽

pp. 64-73 ◽

Author(s):

Ishan Choudhary ◽

Deepak

Keyword(s):

Copper Oxide ◽

Flexible Substrate ◽

Indium Gallium Zinc Oxide ◽

Solution Processed ◽

Indium Gallium ◽

Heterojunction Diodes

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Effect of Metallic Composition on Electrical Properties of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2010.2043179 ◽

2010 ◽

Vol 57 (5) ◽

pp. 1009-1014 ◽

Author(s):

Yong-Hoon Kim ◽

Min-Koo Han ◽

Jeong-In Han ◽

Sung Kyu Park

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Solution Processed ◽

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Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y2O3 passivation

Applied Physics Letters ◽

10.1063/1.4892541 ◽

2014 ◽

Vol 105 (5) ◽

pp. 053507 ◽

Author(s):

Sungjin An ◽

Mallory Mativenga ◽

Youngoo Kim ◽

Jin Jang

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Solution Processed ◽

Bias Stability ◽

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Effects of helium annealing in low-temperature and solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors

AIP Advances ◽

10.1063/1.5092642 ◽

2019 ◽

Vol 9 (4) ◽

pp. 045228 ◽

Author(s):

Jeongmin Kim ◽

Ikjun Jang ◽

Jaewook Jeong

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Solution Processed ◽

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The Impact of Solvents on the Performances of Solution‐Processed Indium Gallium Zinc Oxide Thin‐Film Transistors Using Nitrate Ligands

Advanced Engineering Materials ◽

10.1002/adem.201901053 ◽

2019 ◽

Vol 22 (2) ◽

pp. 1901053 ◽

Author(s):

Saravanan Kumaran ◽

Meng-Tieh Liu ◽

Kung-Yen Lee ◽

Yian Tai

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Solution Processed ◽

Indium Gallium ◽

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Effects of ultraviolet photon irradiation and subsequent thermal treatments on solution-processed amorphous indium gallium zinc oxide thin films

AIP Advances ◽

10.1063/1.5049618 ◽

2018 ◽

Vol 8 (11) ◽

pp. 115304 ◽

Author(s):

Yuki Takamori ◽

Takaaki Morimoto ◽

Nobuko Fukuda ◽

Yoshimichi Ohki

Keyword(s):

Thermal Treatments ◽

Indium Gallium Zinc Oxide ◽

Oxide Thin Films ◽

Solution Processed ◽

Photon Irradiation ◽

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Short time helium annealing for solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors

AIP Advances ◽

10.1063/1.5040019 ◽

2018 ◽

Vol 8 (8) ◽

pp. 085206 ◽

Author(s):

Seung-Un Lee ◽

Jaewook Jeong

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Solution Processed ◽

Indium Gallium ◽

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Multi- and single-step in situ microwave annealing as low-thermal-budget techniques for solution-processed indium–gallium–zinc oxide thin films

Semiconductor Science and Technology ◽

10.1088/1361-6641/aaedd4 ◽

2018 ◽

Vol 34 (1) ◽

pp. 015006 ◽

Author(s):

Jin-Hyeok Jeon ◽

Won-Ju Cho

Keyword(s):

Single Step ◽

Indium Gallium Zinc Oxide ◽

Solution Processed ◽

Thermal Budget ◽

Microwave Annealing ◽

Indium Gallium ◽

Low Thermal Budget

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