Temperature Dependence of Charge Distributions and Carrier Mobility in an Undoped Si/SiGe Heterostructure

2022 ◽  
pp. 1-5
Author(s):  
Nai-Wen Hsu ◽  
Wei-Chih Hou ◽  
Yen-Yang Chen ◽  
Yu-Jui Wu ◽  
Hsiang-Shun Kao ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Carrier Mobility ◽  
Charge Distributions

scholarly journals Resistivity and Carrier Mobility of the SmBa2 Cu3 O6+x Superconductor with Different Oxygen Doping Levels

1999 ◽  
Vol 54 (2) ◽  
pp. 95-100 ◽  
Author(s):  
G. Spinolo ◽  
P. Ghigna ◽  
G. Chiodelli ◽  
M. Ferretti ◽  
G. Flor
Keyword(s):  
High Temperature ◽  
Temperature Dependence ◽  
Oxygen Pressure ◽  
Anderson Localization ◽  
Carrier Mobility ◽  
Hole Mobility ◽  
Dc Conductivity ◽  
Sudden Increase ◽  
Conductivity Measurements ◽  
Oxygen Doping

Abstract DC conductivity measurements between 15 and 300 K are reported for SmBa2 Cu3O6+x samples with different oxygen doping amounts (x) produced by annealing under appropriate high temperature and oxygen pressure conditions and quenching. Samples with x≥0.5 are superconductors: Tc ~60 K at x=0.7, Tc >80 K at ; x=0.9. The transition from superconduction to non-superconduction corresponds to the tetragonal to orthorhombic structural tran-sition and to the transition from semiconducting to metallic temperature dependence of the resistivity. Oxygen doping causes a sudden increase of hole mobility near x=0.5. Below this threshold, the be-havior of the carrier mobility is in agreement with an Anderson localization.

Temperature dependence of the carrier mobility in Ag2Se layers grown on NaCl and SiOx substrates

1994 ◽  
Vol 74 (3) ◽  
pp. 243-255
Author(s):  
K. Somogyi ◽  
P. Panine ◽  
G. Sáfrán
Keyword(s):  
Temperature Dependence ◽  
Carrier Mobility
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