Conventional and novel approaches to RF power generation with two-terminal devices at terahertz frequencies

III-Nitride heterostructure field-effect transistors (HFETs) demonstrated a new paradigm in microwave switching and control applications due to unique combination of extremely low channel resistance (leading to low loss), very high RF power, low off-state capacitance, broad range of operating temperatures, chemical inertness and robustness. The paper reviews novel approaches and recent advances in III-Nitride technology for RF switching devices leading to higher operating frequencies and even lower insertion loss.

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Dielectric Loaded Wakefield Structures for RF Power Generation

10.1063/1.2158804 ◽

2006 ◽

Author(s):

M. E. Conde

Keyword(s):

Power Generation ◽

Rf Power

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RF power generation and coupling measurements for the dielectric wakefield step-up transformer

10.1063/1.58918 ◽

1999 ◽

Cited By ~ 2

Author(s):

M. E. Conde ◽

W. Gai ◽

R. Konecny ◽

J. Power ◽

P. Schoessow ◽

...

Keyword(s):

Power Generation ◽

Rf Power

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Two-Terminal Active Devices for Terahertz Sources

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156403001788 ◽

2003 ◽

Vol 13 (02) ◽

pp. 395-427 ◽

Cited By ~ 14

Author(s):

G. I. Haddad ◽

J. R. East ◽

H. Eisele

Keyword(s):

Power Generation ◽

State Of The Art ◽

Great Promise ◽

Electromagnetic Spectrum ◽

Terahertz Frequency ◽

Frequency Range ◽

Terahertz Frequency Range ◽

Active Devices ◽

New Device ◽

Terahertz Frequencies

The terahertz frequency range of the electromagnetic spectrum holds great promise for many applications including sensing, imaging, and communications. However, the availability of solid-state sources with reasonable power levels is well recognized as one of the major obstacles for systems applications in this frequency range. Here, the state of the art of active two-terminal devices is reviewed and high-lighted with some exemplary experimental results. The potential, capabilities, and limitations of two-terminal devices regarding power generation at terahertz frequencies are discussed. Furthermore, a new device is described that has the potential of circumventing some of the limitations of existing devices.

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Investigation of ultra-thin films of YBa2Cu3O7−δ grown on MgO

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100173169 ◽

1990 ◽

Vol 48 (4) ◽

pp. 6-7

Author(s):

S.K. Streiffer ◽

C.B. Eom ◽

J.C. Bravman ◽

T.H. Geballet

Keyword(s):

Thin Films ◽

Room Temperature ◽

Deposition Process ◽

Nucleation And Growth ◽

Multilayer Structures ◽

Rf Power ◽

Oxygen Loss ◽

Transmission Electron ◽

Single Target ◽

Mtorr Argon

The study of very thin (<15 nm) YBa2Cu3O7−δ (YBCO) films is necessary both for investigating the nucleation and growth of films of this material and for achieving a better understanding of multilayer structures incorporating such thin YBCO regions. We have used transmission electron microscopy to examine ultra-thin films grown on MgO substrates by single-target, off-axis magnetron sputtering; details of the deposition process have been reported elsewhere. Briefly, polished MgO substrates were attached to a block placed at 90° to the sputtering target and heated to 650 °C. The sputtering was performed in 10 mtorr oxygen and 40 mtorr argon with an rf power of 125 watts. After deposition, the chamber was vented to 500 torr oxygen and allowed to cool to room temperature. Because of YBCO’s susceptibility to environmental degradation and oxygen loss, the technique of Xi, et al. was followed and a protective overlayer of amorphous YBCO was deposited on the just-grown films.

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