Modeling of High-Voltage NPT-PIN Diode SRR and Its Optimal Suppression Method Based on RC Snubber Circuit

2021 ◽  
pp. 1-1
Author(s):  
Xin Li ◽  
Fei Xiao ◽  
Yifei Luo ◽  
Ruitian Wang ◽  
Duan Yaoqiang
Keyword(s):  
High Voltage ◽  
Pin Diode ◽  
Snubber Circuit ◽  
Suppression Method

High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode

2014 ◽  
Vol 778-780 ◽  
pp. 841-844 ◽  
Author(s):  
Koji Nakayama ◽  
Shuji Ogata ◽  
Toshihiko Hayashi ◽  
Tetsuro Hemmi ◽  
Atsushi Tanaka ◽  
...  
Keyword(s):  
High Voltage ◽  
Recovery Time ◽  
Carrier Lifetime ◽  
Low Voltage ◽  
Reduction Rate ◽  
Drift Region ◽  
Pin Diode ◽  
Fully Depleted ◽  
Fast Switching ◽  
Reverse Recovery Time

The reverse recovery characteristics of a 4H-SiC PiN diode under higher voltage and faster switching are investigated. In a high-voltage 4H-SiC PiN diode, owing to an increased thickness, the drift region does not become fully depleted at a relatively low voltage Furthermore, an electron–hole recombination must be taken into account when the carrier lifetime is equal to or shorter than the reverse recovery time. High voltage and fast switching are therefore needed for accurate analysis of the reverse recovery characteristics. The current reduction rate increases up to 2 kA/μs because of low stray inductance. The maximum reverse voltage during the reverse recovery time reaches 8 kV, at which point the drift layer is fully depleted. The carrier lifetime at the high level injection is 0.086 μs at room temperature and reaches 0.53 μs at 250 °C.

scholarly journals Static Characteristics of 6.2kV High Voltage 4H-SiC pin Diode with Low Loss

2003 ◽  
Vol 123 (6) ◽  
pp. 660-666
Author(s):  
Katsunori Asano ◽  
Toshihiko Hayashi ◽  
Daisuke Takayama ◽  
Yoshitaka Sugawara ◽  
Ranbir Singh ◽  
...  
Keyword(s):  
High Voltage ◽  
Pin Diode ◽  
Static Characteristics ◽  
Low Loss

Simulation Analysis of Snubber Circuit for SiC MOSFET Inverter

2014 ◽  
Vol 1070-1072 ◽  
pp. 1241-1245
Author(s):  
Li Jun Xie ◽  
Xian Zheng Liu ◽  
Jin Yuan Li ◽  
Kun Shan Yu
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
High Frequency ◽  
Simulation Analysis ◽  
Pwm Inverter ◽  
Parasitic Inductance ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Snubber Circuit ◽  
Parasitic Parameters

SiC MOSFET, as a promising power semiconductor devices, has attracted attention from many laboratories and companies for its super performance in high temperature, high voltage and high frequency applications. To protect the devices from overvoltage induced by parasitic inductance in high frequency applications, snubber circuit is a must. In this paper, simulation of snubber circuit in a high frequency PWM inverter is invested, under different numbers of snubber circuit , parasitic parameters, different kinds of load and whether a SiC SBD exsits. Some useful conclusions are obtained to help design more perfect snubber circuit.

scholarly journals High-Voltage Converter for the Traction Application

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
Sergey Volskiy ◽  
Yury Skorokhod ◽  
Dmitriy Sorokin
Keyword(s):  
High Voltage ◽  
Input Voltage ◽  
Critical Parameters ◽  
Test Results ◽  
Voltage Converter ◽  
Low Loss ◽  
Power Circuit ◽  
Transient Phenomena ◽  
Snubber Circuit ◽  
Performance Capability

High-voltage converter employing IGCT switches (VDC=2800 V) for traction application is presented. Such a power traction drive operates with an unstable input voltage over 2000⋯4000 V DC and with an output power up to 1200 kW. The original power circuit of the high-voltage converter is demonstrated. Development of the attractive approach to designing the low-loss snubber circuits of the high-frequency IGCT switches is proposed. It is established on the complex multilevel analysis of the transient phenomena and power losses. The essential characteristics of the critical parameters under transient modes and the relation between the snubber circuit parameters and the losses are discussed. Experimental results for the prototype demonstrate the properties of new power circuit. The test results confirm the proposed high-voltage converter performance capability as well as verifying the suitability of the conception for its use in the Russian suburban train power system and other high-voltage applications.

3-Level power converter with high-voltage hybrid pairs of SiC-PiN diode and IEGT

2010 ◽  
Author(s):  
Takeo Kanai ◽  
Kazuto Takao ◽  
Takashi Shinohe ◽  
Yasunori Tanaka ◽  
Hiroshi Yamaguchi ◽  
...  
Keyword(s):  
High Voltage ◽  
Power Converter ◽  
Pin Diode
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