Study on Failure Process of Silicon-Doped Amorphous Carbon by ReaxFF Molecular Dynamics Simulation for HAMR

2020 ◽  
Vol 56 (1) ◽  
pp. 1-6 ◽  
Author(s):  
Qingkang Liu ◽  
Longqiu Li ◽  
Guangyu Zhang ◽  
Cijun Shuai
2018 ◽  
Vol 83 ◽  
pp. 134-140 ◽  
Author(s):  
K. Kupka ◽  
A.A. Leino ◽  
W. Ren ◽  
H. Vázquez ◽  
E.H. Åhlgren ◽  
...  

2019 ◽  
Vol 956 ◽  
pp. 78-86
Author(s):  
Jia Wang ◽  
Cheng Lin Liu

The effects of temperature and graphite-like structure additive on the graphitization process of amorphous carbon were investigated through molecular dynamics simulation. The molecular models of amorphous carbon and graphite-like structure-amorphous carbon were constructed with the initial density of 1.62 g/cm3 and carbon atoms number of 4096 by rapid quenching method. After annealing treatment at 3200 K, 3600 K and 4000 K respectively, the evolution rules of sp2 C atoms and the instantaneous conformations of the graphite-like structure-amorphous carbon system were analyzed to investigate the effects of temperature and graphite-like structure on the graphitization process. It could be found that increasing graphitization temperature properly could improve graphitization degree of amorphous carbon. Addition of graphite-like structure could promote recrystallization of the irregular carbon atoms in amorphous carbon materials, thus accelerating graphitization process and promoting graphitization of the system.


2013 ◽  
Vol 52 (1S) ◽  
pp. 01AL04 ◽  
Author(s):  
Atsushi M. Ito ◽  
Arimichi Takayama ◽  
Seiki Saito ◽  
Hiroaki Nakamura

2004 ◽  
Vol 177-178 ◽  
pp. 812-817 ◽  
Author(s):  
Seung-Hyeob Lee ◽  
Churl-Seung Lee ◽  
Seung-Cheol Lee ◽  
Kyu-Hwan Lee ◽  
Kwang-Ryeol Lee

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