Microwave Imaging Using Normal Electric-Field Components Inside Metallic Resonant Chambers

ABSTRACTFor future CMOS GSI technology, Si/SiO2 interface micro-roughness becomes a non-negligible problem. Interface roughness causes fluctuations of the surface normal electric field, which, in turn, change the gate oxide Fowler-Nordheim tunneling behavior. In this research, we used a simple two-spheres model and a three-dimensional Laplace solver to simulate the electric field and the tunneling current in the oxide region. Our results show that both quantities are strong functions of roughness spatial wavelength, associated amplitude, and oxide thickness. We found that RMS roughness itself cannot fully characterize surface roughness and that roughness has a larger effect for thicker oxide in terms of surface electric field and tunneling behavior.

Download Full-text

Electro-osmotic flow in nanochannels with voltage-controlled polyelectrolyte brushes: Dependence on grafting density and normal electric field

Journal of Polymer Science Part B Polymer Physics ◽

10.1002/polb.23069 ◽

2012 ◽

Vol 50 (11) ◽

pp. 805-811 ◽

Cited By ~ 16

Author(s):

Qianqian Cao ◽

Chuncheng Zuo ◽

Lujuan Li ◽

Yinhe Zhang ◽

Guang Yan

Keyword(s):

Electric Field ◽

Polyelectrolyte Brushes ◽

Osmotic Flow ◽

Grafting Density ◽

Normal Electric Field ◽

Electro Osmotic Flow

Download Full-text

A thin conducting viscous film on an inclined plane in the presence of a uniform normal electric field: Bifurcation scenarios

Physics of Fluids ◽

10.1063/1.2896300 ◽

2008 ◽

Vol 20 (3) ◽

pp. 032102 ◽

Cited By ~ 8

Author(s):

B. Uma ◽

R. Usha

Keyword(s):

Electric Field ◽

Inclined Plane ◽

Viscous Film ◽

Thin Conducting ◽

Normal Electric Field

Download Full-text

Capillary–gravity waves on a dielectric fluid of finite depth under normal electric field

European Journal of Mechanics - B/Fluids ◽

10.1016/j.euromechflu.2019.04.007 ◽

2019 ◽

Vol 77 ◽

pp. 98-107 ◽

Cited By ~ 3

Author(s):

Tao Gao ◽

Alex Doak ◽

Jean-Marc Vanden-Broeck ◽

Zhan Wang

Keyword(s):

Electric Field ◽

Gravity Waves ◽

Finite Depth ◽

Dielectric Fluid ◽

Normal Electric Field

Download Full-text

Normal electric field enhanced light-induced polarizations and magnetic detection of valley polarization in silicene

Scientific Reports ◽

10.1038/s41598-020-73138-5 ◽

2020 ◽

Vol 10 (1) ◽

Author(s):

N. Shahabi ◽

A. Phirouznia

Keyword(s):

Electric Field ◽

Light Emission ◽

Polarized Light ◽

Spin Current ◽

Circularly Polarized Light ◽

Circularly Polarized ◽

Normal Electric Field ◽

Valley Polarization ◽

Population Imbalance ◽

Magnetic Detection

Abstract The role of staggered potential on light-induced spin and pseudo-spin polarization has been investigated in silicene. It has been shown that non-equilibrium spin and pseudo-spin polarizations are emerged in silicene sheet by applying an external perpendicular electric field in the presence of circularly polarized light emission. This electric field results in pseudo-spin resolved states very close to the Dirac points therefore could be considered as a pseudomagnetic field. It has been shown that staggered potential induced spin-valley locking and pseudo-spin resolved bands are responsible for the enhancement of the spin and pseudo-spin polarizations. Meanwhile, spin-valley locking suggests a coexistence of both spin and valley polarizations with nearly identical (or at least proportional) population imbalance at low Fermi energies which could be employed for magnetic detection of the valley polarization. It has been shown that spin-valley locking results in the protection of the spin polarizations against the relaxations in elastic scattering regime. In addition, the results indicate that the pseudo-spin current can be generated by the circularly polarized light which could be explained by asymmetric light absorption of the states in k-space.

Download Full-text