Ultra-Low Power Pulse-Triggered CNTFET-Based Flip-Flop

2019 ◽  
Vol 18 ◽  
pp. 756-761
Author(s):  
Ahmad Karimi ◽  
Abdalhossein Rezai ◽  
Mohammad Mahdi Hajhashemkhani
Integration ◽  
2018 ◽  
Vol 60 ◽  
pp. 160-166 ◽  
Author(s):  
Ahmad Karimi ◽  
Abdalhossein Rezai ◽  
Mohammad Mahdi Hajhashemkhani

2021 ◽  
Author(s):  
Yugal Maheshwari ◽  
Kleber Stangherlin ◽  
Derek Wright ◽  
Manoj Sachdev

2019 ◽  
Vol 54 (2) ◽  
pp. 550-559 ◽  
Author(s):  
Yunpeng Cai ◽  
Anand Savanth ◽  
Pranay Prabhat ◽  
James Myers ◽  
Alex S. Weddell ◽  
...  

Author(s):  
Sagi Fisher ◽  
Adam Teman ◽  
Dmitry Vaysman ◽  
Alexander Gertsman ◽  
Orly Yadid-Pecht ◽  
...  
Keyword(s):  

2017 ◽  
Vol 7 (1.1) ◽  
pp. 483
Author(s):  
Shreya Verma ◽  
Tunikipati Usharani ◽  
S Iswariya ◽  
Bhavana Godavarthi

The present research paper proposes to implement a low power pulse-triggered flip-flop. The proposed design is MHLFF (modified hybrid latch flip-flop). In MHLFF method, the pulse generator will be altered concerning illustration inverters what’s more a pasquinade transistor. This technique will be comparative should understood kind about flip flop what’s more it utilizes a static lock structure. Should succeed Most exceedingly bad situation delay issue brought on Eventually Tom's perusing discharging way comprise from claiming three stacked transistor MHLFF may be presented.  We can minimize the power and delay when compared to the existing models i.e, CDFF and SCDFF. The circuit was implementing using Cadence Virtuoso tool in 90-nm and 45-nm technology.


2014 ◽  
Vol 61 (6) ◽  
pp. 1755-1765 ◽  
Author(s):  
Djaafar Chabi ◽  
Weisheng Zhao ◽  
Erya Deng ◽  
Yue Zhang ◽  
Nesrine Ben Romdhane ◽  
...  

Growing demand for portable devices and fast increases in complexity of chip cause power dissipation is an important parameter. Power consumption and dissipation or generations of more heat possess a restriction in the direction of the integration of more transistors. Several methods have been proposed to reduce power dissipation from system level to device level. Subthreshold circuits are widely used in more advanced applications due to ultra low-power consumption. The present work targets on construction of linear feedback shift registers (LFSR) in weak inversion region and their performance observed in terms of parameters like power delay product (PDP). In CMOS circuits subthreshold region of operation allows a low-power for ample utilizations but this advantage get with the penalty of flat speed. For the entrenched and high speed applications, improving the speed of subthreshold designs is essential. To enhance this, operate the devices at maximum current over capacitance. LFSR architectures build with various types of D flip flop and XOR gate circuits are analyzed. Circuit level Simulation is carried out using 130 nm technologies.


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