Statistical modeling of radiation-induced proton transport in silicon: deactivation of dopant acceptors in bipolar devices

2003 ◽  
Vol 50 (6) ◽  
pp. 1896-1900 ◽  
Author(s):  
S.N. Rashkeev ◽  
D.M. Fleetwood ◽  
R.D. Schrimpf ◽  
S.T. Pantelides
2003 ◽  
Vol 83 (22) ◽  
pp. 4646-4648 ◽  
Author(s):  
S. N. Rashkeev ◽  
D. M. Fleetwood ◽  
R. D. Schrimpf ◽  
S. T. Pantelides

2004 ◽  
Vol 51 (6) ◽  
pp. 3178-3185 ◽  
Author(s):  
X.J. Chen ◽  
H.J. Barnaby ◽  
R.L. Pease ◽  
R.D. Schrimpf ◽  
D.G. Platteter ◽  
...  

2020 ◽  
Vol 33 (2) ◽  
pp. 303-316
Author(s):  
Vyacheslav Pershenkov ◽  
Alexander Bakerenkov ◽  
Alexander Rodin ◽  
Vladislav Felitsyn ◽  
Alexander Zhukov ◽  
...  

Possible physical mechanism of enhanced low dose rate sensitivity (ELDRS) and reduced low dose rate sensitivity (RLDRS) in bipolar devices is described. Modification of the low dose rate conversion model is presented. The enhanced or reduced sensitivity can be connected with a specific position of the effective Fermi level relatively acceptor and donor radiation-induced interface traps. The qualitative and quantitative analysis of the low dose rate effects is presented. The effect of the oxide trapped charge on the value of the oxide electric field and the yield of the oxide charge were taken into account. It leads to dependence of the accumulation of radiation induced oxide charge and interface traps on the dose rate. In enhancement version the ELDRS and RLDRS conversion model describes the low dose rate effect in as ?true? dose rate effect.


2014 ◽  
Vol 1016 ◽  
pp. 478-483
Author(s):  
V.S. Pershenkov ◽  
A.S. Bakerenkov ◽  
A.T. Yastrebov ◽  
A.V. Solomatin ◽  
V.V. Belyakov ◽  
...  

The physical model, procedure of fitting parameter extraction and experimental study of the contribution of radiation induced charge neutralization (RICN) effect on enhanced low dose rate sensitivity (ELDRS) of bipolar devices are presented.


Author(s):  
T. Mukai ◽  
T. E. Mitchell

Radiation-induced homogeneous precipitation in Ni-Be alloys was recently observed by high voltage electron microscopy. A coupling of interstitial flux with solute Be atoms is responsible for the precipitation. The present investigation further shows that precipitation is also induced at thin foil surfaces by electron irradiation under a high vacuum.


Author(s):  
Robert C. Rau ◽  
John Moteff

Transmission electron microscopy has been used to study the thermal annealing of radiation induced defect clusters in polycrystalline tungsten. Specimens were taken from cylindrical tensile bars which had been irradiated to a fast (E > 1 MeV) neutron fluence of 4.2 × 1019 n/cm2 at 70°C, annealed for one hour at various temperatures in argon, and tensile tested at 240°C in helium. Foils from both the unstressed button heads and the reduced areas near the fracture were examined.Figure 1 shows typical microstructures in button head foils. In the unannealed condition, Fig. 1(a), a dispersion of fine dot clusters was present. Annealing at 435°C, Fig. 1(b), produced an apparent slight decrease in cluster concentration, but annealing at 740°C, Fig. 1(C), resulted in a noticeable densification of the clusters. Finally, annealing at 900°C and 1040°C, Figs. 1(d) and (e), caused a definite decrease in cluster concentration and led to the formation of resolvable dislocation loops.


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