Single-Event Burnout of Silicon Carbide Schottky Barrier Diodes Caused by High Energy Protons

2007 ◽  
Vol 54 (6) ◽  
pp. 2379-2383 ◽  
Author(s):  
Satoshi Kuboyama ◽  
Chihiro Kamezawa ◽  
Yohei Satoh ◽  
Toshio Hirao ◽  
Hidenori Ohyama
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
High Energy ◽  
Schottky Barrier Diodes ◽  
Single Event

Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout

2006 ◽  
Vol 53 (6) ◽  
pp. 3343-3348 ◽  
Author(s):  
Satoshi Kuboyama ◽  
Chihiro Kamezawa ◽  
Naomi Ikeda ◽  
Toshio Hirao ◽  
Hidenori Ohyama
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
Charge Collection ◽  
Schottky Barrier Diodes ◽  
Single Event ◽  
Permanent Damage

Silicon-carbide high-voltage (400 V) Schottky barrier diodes

1992 ◽  
Vol 13 (10) ◽  
pp. 501-503 ◽  
Author(s):  
M. Bhatnagar ◽  
P.K. McLarty ◽  
B.J. Baliga
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
High Voltage ◽  
Schottky Barrier Diodes

Increasing the current driving capability of epitaxial Schottky-barrier diodes using high-energy implantation

1985 ◽  
Vol 32 (12) ◽  
pp. 2819-2823
Author(s):  
C.T. Chuang ◽  
G.P. Li ◽  
D.D.-L. Tang ◽  
T.H. Ning ◽  
M. Arienzo
Keyword(s):  
Schottky Barrier ◽  
High Energy ◽  
Schottky Barrier Diodes ◽  
Driving Capability

Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond

2007 ◽  
Vol 556-557 ◽  
pp. 865-868
Author(s):  
Gheorghe Brezeanu ◽  
M. Brezeanu ◽  
F. Udrea ◽  
G. Amaratunga ◽  
C. Boianceanu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
Schottky Diodes ◽  
Oxide Thickness ◽  
Electrical Performance ◽  
Schottky Barrier Diodes ◽  
Field Plate ◽  
Plate Technique ◽  
First Time

A classical implementation of the field plate technique is the oxide ramp termination. This paper presents for the first time a comparison between SiC and diamond Schottky barrier diodes (SBD) using this termination. The influences of the ramp angle and oxide thickness on the diodes electrical performance are investigated for both punch-through (PT) and non punch-through (nPT) structures. The efficiency of the termination is also evaluated.

A possible single event burnout hardening technique for SiC Schottky barrier diodes

2021 ◽  
pp. 107087
Author(s):  
Xinfang Liao ◽  
Yi Liu ◽  
Jing Li ◽  
Jialiang Cheng ◽  
Yintang Yang
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Single Event

Characteristics of Silicon Carbide Schottky Barrier Diodes and Confirmation of Power Loss Reduction Effects

2012 ◽  
Vol 38 (0) ◽  
pp. 65-69
Author(s):  
Hironori Hiraoka ◽  
Kazuhiro Matsuda ◽  
Yoshikazu Nishimura ◽  
Tadaaki Kaneko ◽  
Noboru Ohtani
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
Power Loss ◽  
Loss Reduction ◽  
Schottky Barrier Diodes ◽  
Power Loss Reduction

The Impact of Parasitic Inductance on the Performance of Silicon–Carbide Schottky Barrier Diodes

2012 ◽  
Vol 27 (8) ◽  
pp. 3826-3833 ◽  
Author(s):  
Olayiwola Alatise ◽  
Nii-Adotei Parker-Allotey ◽  
Dean Hamilton ◽  
Phil Mawby
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Parasitic Inductance ◽  
The Impact
Sign in / Sign up

Export Citation Format

Share Document