Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond
2007 ◽
Vol 556-557
◽
pp. 865-868
Keyword(s):
A classical implementation of the field plate technique is the oxide ramp termination. This paper presents for the first time a comparison between SiC and diamond Schottky barrier diodes (SBD) using this termination. The influences of the ramp angle and oxide thickness on the diodes electrical performance are investigated for both punch-through (PT) and non punch-through (nPT) structures. The efficiency of the termination is also evaluated.
2005 ◽
Vol 15
(04)
◽
pp. 821-866
◽
Keyword(s):
2014 ◽
Vol 2014
(HITEC)
◽
pp. 000058-000060
1992 ◽
Vol 13
(10)
◽
pp. 501-503
◽
2009 ◽
Vol 615-617
◽
pp. 963-966
◽
2009 ◽
Vol 18
(2-3)
◽
pp. 292-295
◽
Keyword(s):
2015 ◽
Vol 213
(1)
◽
pp. 193-202
◽
Keyword(s):
2013 ◽
Vol 34
(5)
◽
pp. 054007
◽
Keyword(s):