Silicon-carbide high-voltage (400 V) Schottky barrier diodes

1992 ◽  
Vol 13 (10) ◽  
pp. 501-503 ◽  
Author(s):  
M. Bhatnagar ◽  
P.K. McLarty ◽  
B.J. Baliga
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
High Voltage ◽  
Schottky Barrier Diodes

scholarly journals SILICON CARBIDE SCHOTTKY BARRIER DIODE

2005 ◽  
Vol 15 (04) ◽  
pp. 821-866 ◽  
Author(s):  
Jian H. Zhao ◽  
Kuang Sheng ◽  
Ramon C. Lebron-Velilla
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
High Voltage ◽  
Gas Sensors ◽  
Schottky Diodes ◽  
Schottky Barrier Diode ◽  
Schottky Barrier Diodes ◽  
Performance Parameters ◽  
Development History ◽  
The Status

This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

Electro-Thermal SPICE Model for High-Voltage SiC VJFETs

2009 ◽  
Vol 615-617 ◽  
pp. 731-734
Author(s):  
Rudolf Elpelt ◽  
Peter Friedrichs ◽  
J. Hippeli ◽  
Reinhold Schörner ◽  
Michael Treu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
High Voltage ◽  
Thermal Model ◽  
Schottky Barrier Diodes ◽  
Device Structure ◽  
Spice Model ◽  
Operating Temperatures

After the successful introduction of silicon carbide Schottky-Barrier diodes in 2001, next commercial devices will be switching components. The development focus is targeted to MOSFETs and VJFETs. Regarding VJFETs, a promising device was presented several years ago and tested successfully in several applications. Since the unconventional device structure does not allow the use of classical JFET models, a new electro-thermal model was developed, taking into account the features of the design as well as the targeted enlarged range of operating temperatures.

Application of Silicon Carbide Diode in Ultrasound High Voltage Pulse Protection Circuit

2013 ◽  
Vol 290 ◽  
pp. 115-119
Author(s):  
Shi Yuan Zhou ◽  
Kai Zhang ◽  
Dinguo Xiao ◽  
Chun Guang Xu ◽  
Bo Yang
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
High Voltage ◽  
Voltage Pulse ◽  
Recovery Time ◽  
High Performance ◽  
High Voltage Pulse ◽  
Protection Level ◽  
Protection Circuit ◽  
Reverse Recovery Time

SiC diode (Silicon Carbide Diode) is a newly commercial available Schottky barrier diode with zero reverse-recovery-time, which is a perfect candidate for fabricating high voltage pulse protection circuit in ultrasonic transceiver system. With SiC diode’s high performance, the circuit can deliver 400 volts or higher voltage protection level, which is not an easy job for other kind of diodes. In this article, the theory of diode-bridge protection circuit is briefly discussed, and a SiC diode-bridge protection circuit was fabricated, and some experiments has been done to verify the feasibility of using SiC diodes in diode-bridge protection circuit.

High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes

2014 ◽  
Vol 31 (6) ◽  
pp. 068502 ◽  
Author(s):  
He Kang ◽  
Quan Wang ◽  
Hong-Ling Xiao ◽  
Cui-Mei Wang ◽  
Li-Juan Jiang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Voltage ◽  
Schottky Barrier Diodes

High-voltage (>1 kV) SiC Schottky barrier diodes with low on-resistances

1993 ◽  
Vol 14 (12) ◽  
pp. 548-550 ◽  
Author(s):  
T. Kimoto ◽  
T. Urushidani ◽  
S. Kobayashi ◽  
H. Matsunami
Keyword(s):  
Schottky Barrier ◽  
High Voltage ◽  
Schottky Barrier Diodes

scholarly journals Fabrication of high-voltage 4H-SiC Schottky barrier diodes using epitaxial layers obtained at a high growth rate

2002 ◽  
Vol 122 (5) ◽  
pp. 637-643
Author(s):  
Hidekazu Tsuchida ◽  
Takashi Tsuji ◽  
Hiroyuki Fujisawa ◽  
Isaho Kamata ◽  
Tamotsu Jikimoto ◽  
...  
Keyword(s):  
Growth Rate ◽  
Schottky Barrier ◽  
High Voltage ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Layers ◽  
Schottky Barrier Diodes

The guard-ring termination for the high-voltage SiC Schottky barrier diodes

1995 ◽  
Vol 16 (7) ◽  
pp. 331-332 ◽  
Author(s):  
K. Ueno ◽  
T. Urushidani ◽  
K. Hashimoto ◽  
Y. Seki
Keyword(s):  
Schottky Barrier ◽  
High Voltage ◽  
Guard Ring ◽  
Schottky Barrier Diodes
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