scholarly journals Single-Event Performance and Layout Optimization of Flip-Flops in a 28-nm Bulk Technology

2013 ◽  
Vol 60 (4) ◽  
pp. 2782-2788 ◽  
Author(s):  
K. Lilja ◽  
M. Bounasser ◽  
S.-J. Wen ◽  
R. Wong ◽  
J. Holst ◽  
...  
Keyword(s):  
Layout Optimization ◽  
Single Event ◽  
Bulk Technology ◽  
28 Nm

scholarly journals Research on temperature sensitivity of Single-event Transient pulse width in 28-nm bulk technology

2021 ◽  
Vol 2137 (1) ◽  
pp. 012031
Author(s):  
Bohan Zhang ◽  
Bin Liang ◽  
Yahao Fang
Keyword(s):  
Temperature Sensitivity ◽  
Pulse Width ◽  
Single Event ◽  
Single Event Transient ◽  
Worst Case ◽  
Deep Well ◽  
Influence Of Temperature On ◽  
Radiation Resistant ◽  
Bulk Technology ◽  
28 Nm

Abstract The influence of temperature on single-event transient (SET) pulse width has always been a hot issue in the field of anti-irradiation. Based on 3D-TCAD simulation, the temperature sensitivity of the SET pulse width of 28-nm bulk devices has been studied. The simulation results show that the electrical characteristics of the device shows an anti-temperature effect, but the worst case of SET pulse width still occurs at high temperature rather than low temperature. The influence of the triple-well structure on the temperature sensitivity of the SET pulse width has also been studied. The N+ deep well can significantly increase the SET pulse width when hitting NMOS device and enhance the temperature sensitivity of the SET pulse width. The research content of this article will provide reference for the design of radiation resistant chip.

Single Event Upset Evaluation for a 28-nm FDSOI SRAM Type Buffer in an ARM Processor

2021 ◽  
Author(s):  
Shuting Shi ◽  
Rui Chen ◽  
Rui Liu ◽  
Mo Chen ◽  
Chen Shen ◽  
...  
Keyword(s):  
Single Event Upset ◽  
Single Event ◽  
Arm Processor ◽  
28 Nm

Alpha-Particle, Carbon-Ion and Proton- Induced Flip-Flop Single-Event-Upsets in 65 nm Bulk Technology

2008 ◽  
Vol 55 (6) ◽  
pp. 3375-3380 ◽  
Author(s):  
Larry Wissel ◽  
Ethan H. Cannon ◽  
David F. Heidel ◽  
Michael S. Gordon ◽  
Kenneth P. Rodbell
Keyword(s):  
Alpha Particle ◽  
Single Event ◽  
Flip Flop ◽  
Carbon Ion ◽  
Single Event Upsets ◽  
Bulk Technology

Investigation of single event effect in 28-nm system-on-chip with multi patterns

2020 ◽  
Vol 29 (10) ◽  
pp. 108504
Author(s):  
Wei-Tao Yang ◽  
Yong-Hong Li ◽  
Ya-Xin Guo ◽  
Hao-Yu Zhao ◽  
Yang Li ◽  
...  
Keyword(s):  
System On Chip ◽  
Single Event ◽  
Single Event Effect ◽  
On Chip ◽  
28 Nm

scholarly journals Single Event Upsets Under 14-MeV Neutrons in a 28-nm SRAM-Based FPGA in Static Mode

2020 ◽  
Vol 67 (7) ◽  
pp. 1461-1469 ◽  
Author(s):  
Juan Carlos Fabero ◽  
Hortensia Mecha ◽  
Francisco J. Franco ◽  
Juan Antonio Clemente ◽  
Golnaz Korkian ◽  
...  
Keyword(s):  
Single Event ◽  
Static Mode ◽  
Single Event Upsets ◽  
28 Nm

Electron-Induced Single-Event Upsets in 45-nm and 28-nm Bulk CMOS SRAM-Based FPGAs Operating at Nominal Voltage

2015 ◽  
Vol 62 (6) ◽  
pp. 2717-2724 ◽  
Author(s):  
Matthew J. Gadlage ◽  
Austin H. Roach ◽  
Adam R. Duncan ◽  
Mark W. Savage ◽  
Matthew J. Kay
Keyword(s):  
Single Event ◽  
Single Event Upsets ◽  
Nominal Voltage ◽  
28 Nm
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