Interface Effects on Total Energy Calculations for Radiation-Induced Defects

2013 ◽  
Vol 60 (6) ◽  
pp. 4109-4115
Author(s):  
Arthur H. Edwards ◽  
Hugh Barnaby ◽  
Andrew C. Pineda ◽  
Peter A. Schultz
Materials ◽  
2019 ◽  
Vol 12 (16) ◽  
pp. 2639 ◽  
Author(s):  
Wenfan Yang ◽  
Jingyu Pang ◽  
Shijian Zheng ◽  
Jian Wang ◽  
Xinghang Zhang ◽  
...  

In advanced fission and fusion reactors, structural materials suffer from high dose irradiation by energetic particles and are subject to severe microstructure damage. He atoms, as a byproduct of the (n, α) transmutation reaction, could accumulate to form deleterious cavities, which accelerate radiation-induced embrittlement, swelling and surface deterioration, ultimately degrade the service lifetime of reactor materials. Extensive studies have been performed to explore the strategies that can mitigate He ion irradiation damage. Recently, nanostructured materials have received broad attention because they contain abundant interfaces that are efficient sinks for radiation-induced defects. In this review, we summarize and analyze the current understandings on interface effects on He ion irradiation in nanostructured materials. Some key challenges and research directions are highlighted for studying the interface effects on radiation damage in nanostructured materials.


Author(s):  
H. Watanabe ◽  
B. Kabius ◽  
B. Roas ◽  
K. Urban

Recently it was reported that the critical current density(Jc) of YBa2Cu2O7, in the presence of magnetic field, is enhanced by ion irradiation. The enhancement is thought to be due to the pinning of the magnetic flux lines by radiation-induced defects or by structural disorder. The aim of the present study was to understand the fundamental mechanisms of the defect formation in association with the pinning effect in YBa2Cu3O7 by means of high-resolution electron microscopy(HRTEM).The YBa2Cu3O7 specimens were prepared by laser ablation in an insitu process. During deposition, a substrate temperature and oxygen atmosphere were kept at about 1073 K and 0.4 mbar, respectively. In this way high quality epitaxially films can be obtained with the caxis parallel to the <100 > SrTiO3 substrate normal. The specimens were irradiated at a temperature of 77 K with 173 MeV Xe ions up to a dose of 3.0 × 1016 m−2.


1986 ◽  
Vol 47 (C8) ◽  
pp. C8-1045-C8-1048
Author(s):  
T. BOLZE ◽  
J. PEISL

1989 ◽  
Vol 32 (3) ◽  
pp. 198-203
Author(s):  
A. N. Georgobiani ◽  
M. B. Kotlyarevskii ◽  
B. P. Dement'ev ◽  
V. N. Mikhalenko ◽  
N. V. Serdyuk ◽  
...  

1994 ◽  
Vol 33 (Part 2, No. 2B) ◽  
pp. L233-L234 ◽  
Author(s):  
Yoshinori Hayashi ◽  
Yuki Okuda ◽  
Hisamitsu Mitera ◽  
Keizo Kato

1990 ◽  
Vol 42 (18) ◽  
pp. 11637-11643 ◽  
Author(s):  
M. Sigalas ◽  
N. C. Bacalis ◽  
D. A. Papaconstantopoulos ◽  
M. J. Mehl ◽  
A. C. Switendick

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