scholarly journals Interface Effects on He Ion Irradiation in Nanostructured Materials

Materials ◽  
2019 ◽  
Vol 12 (16) ◽  
pp. 2639 ◽  
Author(s):  
Wenfan Yang ◽  
Jingyu Pang ◽  
Shijian Zheng ◽  
Jian Wang ◽  
Xinghang Zhang ◽  
...  
Keyword(s):  
Nanostructured Materials ◽  
Ion Irradiation ◽  
Irradiation Damage ◽  
High Dose ◽  
Research Directions ◽  
Service Lifetime ◽  
Radiation Induced ◽  
Reactor Materials ◽  
Induced Defects ◽  
Interface Effects

In advanced fission and fusion reactors, structural materials suffer from high dose irradiation by energetic particles and are subject to severe microstructure damage. He atoms, as a byproduct of the (n, α) transmutation reaction, could accumulate to form deleterious cavities, which accelerate radiation-induced embrittlement, swelling and surface deterioration, ultimately degrade the service lifetime of reactor materials. Extensive studies have been performed to explore the strategies that can mitigate He ion irradiation damage. Recently, nanostructured materials have received broad attention because they contain abundant interfaces that are efficient sinks for radiation-induced defects. In this review, we summarize and analyze the current understandings on interface effects on He ion irradiation in nanostructured materials. Some key challenges and research directions are highlighted for studying the interface effects on radiation damage in nanostructured materials.

Xenon ion irradiation of superconducting YBa2Cu3O7 thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 92-93
Author(s):  
H. Watanabe ◽  
B. Kabius ◽  
B. Roas ◽  
K. Urban
Keyword(s):  
Defect Formation ◽  
Ion Irradiation ◽  
High Resolution Electron Microscopy ◽  
Structural Disorder ◽  
Flux Lines ◽  
Pinning Effect ◽  
Magnetic Flux Lines ◽  
Resolution Electron ◽  
Radiation Induced ◽  
Induced Defects

Recently it was reported that the critical current density(Jc) of YBa2Cu2O7, in the presence of magnetic field, is enhanced by ion irradiation. The enhancement is thought to be due to the pinning of the magnetic flux lines by radiation-induced defects or by structural disorder. The aim of the present study was to understand the fundamental mechanisms of the defect formation in association with the pinning effect in YBa2Cu3O7 by means of high-resolution electron microscopy(HRTEM).The YBa2Cu3O7 specimens were prepared by laser ablation in an insitu process. During deposition, a substrate temperature and oxygen atmosphere were kept at about 1073 K and 0.4 mbar, respectively. In this way high quality epitaxially films can be obtained with the caxis parallel to the <100 > SrTiO3 substrate normal. The specimens were irradiated at a temperature of 77 K with 173 MeV Xe ions up to a dose of 3.0 × 1016 m−2.

scholarly journals MINIMAL VARIATION OF DEFECT STRUCTURE DUE TO THE ORDER OF ROOM TEMPERATURE HYDROGEN ISOTOPE IMPLANTATION AND SELF-ION IRRADIATION IN NICKEL

MRS Advances ◽  
2016 ◽  
Vol 1 (42) ◽  
pp. 2887-2892
Author(s):  
Brittany Muntifering ◽  
Jianmin Qu ◽  
Khalid Hattar
Keyword(s):  
Dislocation Loop ◽  
Hydrogen Isotope ◽  
Room Temperature ◽  
Ion Irradiation ◽  
In Situ Tem ◽  
Loop Formation ◽  
Radiation Induced ◽  
Formation And Evolution ◽  
And Performance ◽  
Induced Defects

ABSTRACTThe formation and stability of radiation-induced defects in structural materials in reactor environments significantly effects their integrity and performance. Hydrogen, which may be present in significant quantities in future reactors, may play an important role in defect evolution. To characterize the effect of hydrogen on cascade damage evolution, in-situ TEM self-ion irradiation and deuterium implantation was performed, both sequentially and concurrently, on nickel. This paper presents preliminary results characterizing dislocation loop formation and evolution during room temperature deuterium implantation and self-ion irradiation and the consequence of the sequence of irradiation. Hydrogen isotope implantation at room temperature appears to have little or no effect on the final dislocation loop structures that result from self-ion irradiation, regardless of the sequence of irradiation. Tilting experiments emphasize the importance of precise two-beam conditions for characterizing defect size and structure.

Effect of Proton Irradiation Induced Defects on 4H-SiC Schottky Diode X-Ray Detectors

2011 ◽  
Vol 679-680 ◽  
pp. 547-550
Author(s):  
Rupert C. Stevens ◽  
Konstantin Vassilevski ◽  
John E. Lees ◽  
Nicolas G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
Schottky Diode ◽  
Nuclear Power ◽  
Proton Irradiation ◽  
Deep Level ◽  
High Dose ◽  
X Ray ◽  
Power Stations ◽  
Radiation Induced ◽  
Transient Spectroscopy ◽  
Induced Defects

Detectors capable of withstanding high radiation environments for prolonged periods of exposure are essential for the monitoring of nuclear power stations and nuclear waste as well as for space exploration. Schottky diode X-ray detectors were exposed to high dose proton irradiation (1013 cm-2, 50 MeV) and changes in the detection resolution (spectroscopic full width half-maximum) have been observed. Using Deep Level Transient Spectroscopy (DLTS) and the degradation of the electrical characteristics of the diode, we have shown that radiation induced traps located in the upper half of the bandgap have reduced the concentration of carriers.

scholarly journals Electron Beam Effects during In-Situ Annealing of Self-Ion Irradiated Nanocrystalline Nickel

2015 ◽  
Vol 1809 ◽  
pp. 13-18 ◽  
Author(s):  
Brittany Muntifering ◽  
Rémi Dingreville ◽  
Khalid Hattar ◽  
Jianmin Qu
Keyword(s):  
Electron Beam ◽  
Nuclear Reactor ◽  
Ion Irradiation ◽  
Nanocrystalline Nickel ◽  
Transmission Electron ◽  
Radiation Induced ◽  
Reactor Materials ◽  
Diffraction Patterns ◽  
Underlying Mechanisms

ABSTRACTTransmission electron microscopy (TEM) is a valuable methodology for investigating radiation-induced microstructural changes and elucidating the underlying mechanisms involved in the aging and degradation of nuclear reactor materials. However, the use of electrons for imaging may result in several inadvertent effects that can potentially change the microstructure and mechanisms active in the material being investigated. In this study, in situ TEM characterization is performed on nanocrystalline nickel samples under self-ion irradiation and post irradiation annealing. During annealing, voids are formed around 200 °C only in the area illuminated by the electron beam. Based on diffraction patterns analyses, it is hypothesized that the electron beam enhanced the growth of a NiO layer resulting in a decrease of vacancy mobility during annealing. The electron beam used to investigate self-ion irradiation ultimately significantly affected the type of defects formed and the final defect microstructure.

Radiation-Induced Defects in Si after High Dose Proton Irradiation

2017 ◽  
Vol 373 ◽  
pp. 209-212 ◽  
Author(s):  
Yurii V. Funtikov ◽  
Leonid Yu. Dubov ◽  
Yurii V. Shtotsky ◽  
Sergey V. Stepanov
Keyword(s):  
Bragg Peak ◽  
Proton Irradiation ◽  
Defect Formation ◽  
High Energy ◽  
High Dose ◽  
Number Density ◽  
High Energy Proton ◽  
Energy Proton ◽  
Radiation Induced ◽  
Induced Defects

Experiments on investigation of the radiation defects produced as a result of high energy proton irradiation of single crystal Si wafers are carried out. Parameters of the proton irradiation facility are presented. It is shown that the most efficient radiation defect formation correlates with the position of the Bragg peak of ionization losses. LT spectra were measured just after irradiation and then after keeping Si samples during 3 months of at room T. We did not observe any variation of the number density of the defects, except for the 7th wafer, where most part of protons was stopped. An efficient annealing of the vacancy-type defects starts at temperatures slightly lower than 100 °C (during 10 min). Annealing at about 700 °C leads to recovering of the monoexponrntial shape of the LT spectra.

Interface Effects on Total Energy Calculations for Radiation-Induced Defects

2013 ◽  
Vol 60 (6) ◽  
pp. 4109-4115
Author(s):  
Arthur H. Edwards ◽  
Hugh Barnaby ◽  
Andrew C. Pineda ◽  
Peter A. Schultz
Keyword(s):  
Total Energy ◽  
Energy Calculations ◽  
Radiation Induced ◽  
Induced Defects ◽  
Interface Effects

scholarly journals IMITATING NEUTRON IRRADIATION DAMAGE USING A COMBINATION OF ION BEAMS

2018 ◽  
Vol 14 ◽  
pp. 42
Author(s):  
Václav Šísl ◽  
Martin Ševeček
Keyword(s):  
Neutron Irradiation ◽  
Nuclear Reactor ◽  
Ion Irradiation ◽  
Ion Beams ◽  
Third Party ◽  
Irradiation Damage ◽  
Material Structure ◽  
Monte Carlo Code ◽  
The One ◽  
Induced Defects

There is a strong motivation for using ion beams to imitate neutron irradiation damage, mainly in order to reduce costs and time demands linked to neutron irradiation experiments. The long-term goal of the authors is to create an ion irradiation methodology, which could be employed in the development process of innovative nuclear fuel materials. This methodology will be based on combining of a set of ion beams in such a way that the final distribution of irradiation-induced defects in the material structure is similar to the one which would have been introduced by neutrons in a nuclear reactor. The first part of the methodology is represented by an optimization tool described here. The tool uses a third party Monte Carlo code SRIM to simulate ion transport in a target and to determine the distribution of radiation damage. Subsequently, a custom genetic optimization algorithm is applied to a set of damage distribution profiles to find their optimal combination.

scholarly journals Enhanced Radiation Tolerance of Tungsten Nanoparticles to He Ion Irradiation

Nanomaterials ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 1052 ◽  
Author(s):  
E. Aradi ◽  
J. Lewis-Fell ◽  
R.W. Harrison ◽  
G. Greaves ◽  
A.H. Mir ◽  
...  
Keyword(s):  
Structural Damage ◽  
Ion Irradiation ◽  
Black Spot ◽  
Volume Ratio ◽  
Potential Effect ◽  
Nanoporous Materials ◽  
Dislocation Loops ◽  
Radiation Induced ◽  
The Individual ◽  
Induced Defects

Materials exposed to plasmas in magnetic confinement nuclear reactors will accumulate radiation-induced defects and energetically implanted gas atoms (from the plasma and transmutations), of which insoluble helium (He) is likely to be the most problematic. The large surface-area-to-volume ratio exhibited by nanoporous materials provides an unsaturable sink with the potential to continuously remove both point defects and He. This property enhances the possibilities for these materials to be tailored for high radiation-damage resistance. In order to explore the potential effect of this on the individual ligaments of nanoporous materials, we present results on the response of tungsten (W) nanoparticles (NPs) to 15 keV He ion irradiation. Tungsten foils and various sizes of NPs were ion irradiated concurrently and imaged in-situ via transmission electron microscopy at 750 °C. Helium bubbles were not observed in NPs with diameters less than 20 nm but did form in larger NPs and the foils. No dislocation loops or black spot damage were observed in any NPs up to 100 nm in diameter but were found to accumulate in the W foils. These results indicate that a nanoporous material, particularly one made up of ligaments with characteristic dimensions of 30 nm or less, is likely to exhibit significant resistance to He accumulation and structural damage and, therefore, be highly tolerant to radiation.

Proton Irradiation Damage in Zn and Cd Doped InP

1993 ◽  
Vol 325 ◽  
Author(s):  
George C. Rybicki ◽  
Wendell S. Williams
Keyword(s):  
Cross Sections ◽  
Deep Level Transient Spectroscopy ◽  
Proton Irradiation ◽  
Deep Level ◽  
Irradiation Damage ◽  
Radiation Induced ◽  
Diffusion Rates ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Capture Cross Sections

AbstractDeep Level Transient Spectroscopy (DLTS) was used to study the defects introduced in Zn and Cd doped Schottky barrier diodes by 2 MeV proton irradiation. The defects H3, H4 and H5 were observed in lightly Zn doped InP, while only the defects H3 and H5 were observed in more heavily Zn doped and Cd doped InP. The defect activation energies and capture cross sections did not vary between the Zn and Cd doped InP.The concentration of the radiation induced defects was also measured. The introduction rate of the defect H4 in the lightly Zn doped InP and the introduction rate of the defect H3 in the heavily Zn and Cd doped InP were about equal, but the introduction rate of the defect H5 varied strongly among the three types of material. The introduction rate of H5 was highest in the heavily Zn doped InP but the lowest in the heavily Cd doped InP, even though they were doped comparably. As a result, the total defect introduction rate was lowest in the highly Cd doped InP.The results can be interpreted in terms of the models for the formation and annealing of defects, and by the different diffusion rates of Zn and Cd in InP.

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