Total Ionizing Dose Effects in 3-D NAND Flash Memories

2019 ◽  
Vol 66 (1) ◽  
pp. 48-53 ◽  
Author(s):  
Marta Bagatin ◽  
Simone Gerardin ◽  
Alessandro Paccagnella ◽  
Silvia Beltrami ◽  
Alessandra Costantino ◽  
...  
Keyword(s):  
Nand Flash ◽  
Total Ionizing Dose ◽  
Flash Memories ◽  
Dose Effects ◽  
Total Ionizing Dose Effects

scholarly journals Total Ionizing Dose Effects in NOR and NAND Flash Memories

2007 ◽  
Vol 54 (4) ◽  
pp. 1066-1070 ◽  
Author(s):  
Giorgio Cellere ◽  
Alessandro Paccagnella ◽  
Angelo Visconti ◽  
Mauro Bonanomi ◽  
S. Beltrami ◽  
...  
Keyword(s):  
Nand Flash ◽  
Total Ionizing Dose ◽  
Flash Memories ◽  
Dose Effects ◽  
Total Ionizing Dose Effects

Total ionizing dose effects in junctionless accumulation mode MOSFET

2021 ◽  
Vol 127 (3) ◽  
Author(s):  
Avashesh Dubey ◽  
Rakhi Narang ◽  
Manoj Saxena ◽  
Mridula Gupta
Keyword(s):  
Total Ionizing Dose ◽  
Accumulation Mode ◽  
Dose Effects ◽  
Total Ionizing Dose Effects

scholarly journals Total Ionizing Dose Effects on Piezoelectric Thin-Film Cantilevers With Oxide Electrodes

2017 ◽  
Vol 64 (7) ◽  
pp. 1135-1143 ◽  
Author(s):  
Ryan Q. Rudy ◽  
Kyle M. Grove ◽  
Manuel Rivas ◽  
Jonathon Guerrier ◽  
Cory Cress ◽  
...  
Keyword(s):  
Thin Film ◽  
Total Ionizing Dose ◽  
Oxide Electrodes ◽  
Dose Effects ◽  
Piezoelectric Thin Film ◽  
Total Ionizing Dose Effects

Total ionizing dose effects on Ag/ amorphous Bi3.15Nd0.85Ti3O12/Pt resistive switching memory

2018 ◽  
Vol 219 ◽  
pp. 340-346 ◽  
Author(s):  
H.J. Song ◽  
W.Z. Yan ◽  
X.L. Zhong ◽  
S.Z. Zheng ◽  
Shengsheng Yang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Total Ionizing Dose ◽  
Resistive Switching Memory ◽  
Dose Effects ◽  
Total Ionizing Dose Effects ◽  
Switching Memory

Total Ionizing Dose Effects and Proton-Induced Displacement Damage on MoS2-Interlayer-MoS2 Tunneling Junctions

2019 ◽  
Vol 66 (1) ◽  
pp. 420-427 ◽  
Author(s):  
Pan Wang ◽  
Christopher J. Perini ◽  
Andrew O'Hara ◽  
Huiqi Gong ◽  
Pengfei Wang ◽  
...  
Keyword(s):  
Total Ionizing Dose ◽  
Displacement Damage ◽  
Dose Effects ◽  
Tunneling Junctions ◽  
Total Ionizing Dose Effects

scholarly journals Total Ionizing Dose Effects on a Delay-Based Physical Unclonable Function Implemented in FPGAs

Electronics ◽  
2018 ◽  
Vol 7 (9) ◽  
pp. 163 ◽  
Author(s):  
Honorio Martin ◽  
Pedro Martin-Holgado ◽  
Yolanda Morilla ◽  
Luis Entrena ◽  
Enrique San-Millan
Keyword(s):  
Low Cost ◽  
Ring Oscillator ◽  
Radiation Environment ◽  
Key Generation ◽  
Total Ionizing Dose ◽  
Space Applications ◽  
Physical Unclonable Functions ◽  
Dose Effects ◽  
Total Ionizing Dose Effects

Physical Unclonable Functions (PUFs) are hardware security primitives that are increasingly being used for authentication and key generation in ICs and FPGAs. For space systems, they are a promising approach to meet the needs for secure communications at low cost. To this purpose, it is essential to determine if they are reliable in the space radiation environment. In this work we evaluate the Total Ionizing Dose effects on a delay-based PUF implemented in SRAM-FPGA, namely a Ring Oscillator PUF. Several major quality metrics have been used to analyze the evolution of the PUF response with the total ionizing dose. Experimental results demonstrate that total ionizing dose has a perceptible effect on the quality of the PUF response, but it could still be used for space applications by making some appropriate corrections.

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