scholarly journals Total ionizing dose effects of γ and X-rays on 55 nm silicon-oxide-nitride-oxide-silicon single flash memory cell

2019 ◽  
Vol 68 (3) ◽  
pp. 038501
Author(s):  
Yang Cao ◽  
Kai Xi ◽  
Yan-Nan Xu ◽  
Mei Li ◽  
Bo Li ◽  
...  
Keyword(s):  
Flash Memory ◽  
Silicon Oxide ◽  
Memory Cell ◽  
X Rays ◽  
Total Ionizing Dose ◽  
Single Flash ◽  
Dose Effects ◽  
Flash Memory Cell ◽  
Nitride Oxide ◽  
Total Ionizing Dose Effects

Total ionizing dose effects in high voltage devices for flash memory

2010 ◽  
Vol 268 (23) ◽  
pp. 3498-3503 ◽  
Author(s):  
Zhangli Liu ◽  
Zhiyuan Hu ◽  
Zhengxuan Zhang ◽  
Hua Shao ◽  
Ming Chen ◽  
...  
Keyword(s):  
High Voltage ◽  
Flash Memory ◽  
Total Ionizing Dose ◽  
Dose Effects ◽  
Total Ionizing Dose Effects

Charge loss behavior of a metal-alumina-nitride-oxide-silicon-type flash memory cell with different levels of charge injection

2008 ◽  
Vol 93 (23) ◽  
pp. 232105 ◽  
Author(s):  
Man Chang ◽  
Minseok Jo ◽  
Seonghyun Kim ◽  
Yongkyu Ju ◽  
Seungjae Jung ◽  
...  
Keyword(s):  
Flash Memory ◽  
Charge Injection ◽  
Memory Cell ◽  
Charge Loss ◽  
Flash Memory Cell ◽  
Nitride Oxide ◽  
Different Levels

scholarly journals Total ionizing dose effects on innovative silicon-on-insulator static random access memory cell

2019 ◽  
Vol 68 (16) ◽  
pp. 168501
Author(s):  
Shuo Wang ◽  
Yong-Wei Chang ◽  
Jing Chen ◽  
Ben-Yan Wang ◽  
Wei-Wei He ◽  
...  
Keyword(s):  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Silicon On Insulator ◽  
Static Random Access Memory ◽  
Total Ionizing Dose ◽  
Access Memory ◽  
Dose Effects ◽  
Total Ionizing Dose Effects

Carrier Profiling of the 10-nm-order Structure in a 3D Flash Memory Cell Using Scanning Nonlinear Dielectric Microscopy

2019 ◽  
Author(s):  
Jun Hirota ◽  
Ken Hoshino ◽  
Tsukasa Nakai ◽  
Kohei Yamasue ◽  
Yasuo Cho
Keyword(s):  
Spatial Resolution ◽  
Flash Memory ◽  
Analytical Techniques ◽  
Memory Cell ◽  
Memory Device ◽  
Floating Gate ◽  
Order Structure ◽  
Carrier Distribution ◽  
Nonlinear Dielectric ◽  
Flash Memory Cell

Abstract In this paper, the authors report their successful attempt to acquire the scanning nonlinear dielectric microscopy (SNDM) signals around the floating gate and channel structures of the 3D Flash memory device, utilizing the custom-built SNDM tool with a super-sharp diamond tip. The report includes details of the SNDM measurement and process involved in sample preparation. With the super-sharp diamond tips with radius of less than 5 nm to achieve the supreme spatial resolution, the authors successfully obtained the SNDM signals of floating gate in high contrast to the background in the selected areas. They deduced the minimum spatial resolution and seized a clear evidence that the diffusion length differences of the n-type impurity among the channels are less than 21 nm. Thus, they concluded that SNDM is one of the most powerful analytical techniques to evaluate the carrier distribution in the superfine three dimensionally structured memory devices.

Total ionizing dose effects in junctionless accumulation mode MOSFET

2021 ◽  
Vol 127 (3) ◽  
Author(s):  
Avashesh Dubey ◽  
Rakhi Narang ◽  
Manoj Saxena ◽  
Mridula Gupta
Keyword(s):  
Total Ionizing Dose ◽  
Accumulation Mode ◽  
Dose Effects ◽  
Total Ionizing Dose Effects

scholarly journals Total Ionizing Dose Effects on Piezoelectric Thin-Film Cantilevers With Oxide Electrodes

2017 ◽  
Vol 64 (7) ◽  
pp. 1135-1143 ◽  
Author(s):  
Ryan Q. Rudy ◽  
Kyle M. Grove ◽  
Manuel Rivas ◽  
Jonathon Guerrier ◽  
Cory Cress ◽  
...  
Keyword(s):  
Thin Film ◽  
Total Ionizing Dose ◽  
Oxide Electrodes ◽  
Dose Effects ◽  
Piezoelectric Thin Film ◽  
Total Ionizing Dose Effects
Sign in / Sign up

Export Citation Format

Share Document