Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors

2019 ◽  
Vol 66 (4) ◽  
pp. 702-709 ◽  
Author(s):  
Qiwen Zheng ◽  
Jiangwei Cui ◽  
Liewei Xu ◽  
Bingxu Ning ◽  
Kai Zhao ◽  
...  
Keyword(s):  
Thin Body ◽  
Total Ionizing Dose ◽  
Buried Oxide ◽  
Forward Body Bias ◽  
Dose Responses ◽  
Body Bias

Forward body-bias SRAM circuitry on bulk Si with twin double-well

1997 ◽  
Vol 33 (23) ◽  
pp. 1929
Author(s):  
K. Kioi ◽  
S. Kakimoto ◽  
Y. Sato
Keyword(s):  
Forward Body Bias ◽  
Body Bias

scholarly journals Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric

2018 ◽  
Vol 65 (1) ◽  
pp. 46-52 ◽  
Author(s):  
Maruf A. Bhuiyan ◽  
Hong Zhou ◽  
Sung-Jae Chang ◽  
Xiabing Lou ◽  
Xian Gong ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Total Ionizing Dose ◽  
Dose Responses

Forward body bias for microprocessors in 130-nm technology generation and beyond

2003 ◽  
Vol 38 (5) ◽  
pp. 696-701 ◽  
Author(s):  
S. Narendra ◽  
A. Keshavarzi ◽  
B.A. Bloechel ◽  
S. Borkar ◽  
V. De
Keyword(s):  
Technology Generation ◽  
Forward Body Bias ◽  
Body Bias
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