1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation

2022 ◽  
pp. 1-13
Author(s):  
Ruiqin Zhang ◽  
Qiwen Zheng ◽  
Wu Lu ◽  
Jiangwei Cui ◽  
Yudong Li ◽  
...  
Keyword(s):  
Thin Body ◽  
Total Ionizing Dose ◽  
Buried Oxide ◽  
Dose Irradiation

Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors

2019 ◽  
Vol 66 (4) ◽  
pp. 702-709 ◽  
Author(s):  
Qiwen Zheng ◽  
Jiangwei Cui ◽  
Liewei Xu ◽  
Bingxu Ning ◽  
Kai Zhao ◽  
...  
Keyword(s):  
Thin Body ◽  
Total Ionizing Dose ◽  
Buried Oxide ◽  
Forward Body Bias ◽  
Dose Responses ◽  
Body Bias

A review of the mechanical stressors efficiency applied to the ultra-thin body & buried oxide fully depleted silicon on insulator technology

2016 ◽  
Vol 117 ◽  
pp. 100-116 ◽  
Author(s):  
Pierre Morin ◽  
Sylvain Maitrejean ◽  
Frederic Allibert ◽  
Emmanuel Augendre ◽  
Qing Liu ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Thin Body ◽  
Fully Depleted ◽  
Buried Oxide ◽  
Silicon On Insulator Technology

Fabrication and Electrical Characterization of Ultra-Thin Body and BOX (UTBB) Back Enhanced SOI (BESOI) pMOSFET

2020 ◽  
Vol 15 (1) ◽  
pp. 1-6
Author(s):  
Ricardo Cardoso Rangel ◽  
Katia R. A. Sasaki ◽  
Leonardo Shimizu Yojo ◽  
João Antonio Martino
Keyword(s):  
First Generation ◽  
Electrical Characterization ◽  
Current Drive ◽  
The Body ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Thin Body ◽  
Back Gate ◽  
Buried Oxide ◽  
Complementary Mos Technology

This work analyzes the third generation BESOI MOSFET (Back-Enhanced Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect-transistor) built on UTBB (Ultra-Thin Body and Buried Oxide), comparing it to the BESOI with thick buried oxide (first generation). The stronger coupling between front and back interfaces of the UTBB BESOI device improves in 67% the current drive, 122% the maximum transconductance and 223% the body factor. Operating with seven times lower back gate bias, the UTBB BESOI MOSFET presented more compatibility with standard SOI CMOS (Complementary MOS) technology than the BESOI with thick buried oxide.

Total-Ionizing-Dose Irradiation-Induced Dielectric Field Enhancement for High-Voltage SOI LDMOS

2019 ◽  
Vol 40 (4) ◽  
pp. 593-596 ◽  
Author(s):  
Xin Zhou ◽  
Zhangyi'an Yuan ◽  
Lei Shu ◽  
Ming Qiao ◽  
Zhenlin Lu ◽  
...  
Keyword(s):  
High Voltage ◽  
Field Enhancement ◽  
Total Ionizing Dose ◽  
Dose Irradiation

Effects of Total-Ionizing-Dose Irradiation on Single-Event Response for Flip-Flop Designs at a 14-/16-nm Bulk FinFET Technology Node

2018 ◽  
Vol 65 (8) ◽  
pp. 1928-1934 ◽  
Author(s):  
H. Zhang ◽  
H. Jiang ◽  
X. Fan ◽  
J. S. Kauppila ◽  
I. Chatterjee ◽  
...  
Keyword(s):  
Single Event ◽  
Total Ionizing Dose ◽  
Flip Flop ◽  
Technology Node ◽  
Dose Irradiation ◽  
Event Response

Effects of Total-Ionizing-Dose Irradiation on SEU- and SET-Induced Soft Errors in Bulk 40-nm Sequential Circuits

2017 ◽  
Vol 64 (1) ◽  
pp. 471-476 ◽  
Author(s):  
R. M. Chen ◽  
Z. J. Diggins ◽  
N. N. Mahatme ◽  
L. Wang ◽  
E. X. Zhang ◽  
...  
Keyword(s):  
Soft Errors ◽  
Sequential Circuits ◽  
Total Ionizing Dose ◽  
Dose Irradiation

Ultra-thin body & buried oxide SOI substrate development and qualification for Fully Depleted SOI device with back bias capability

2016 ◽  
Vol 117 ◽  
pp. 2-9 ◽  
Author(s):  
Walter Schwarzenbach ◽  
Bich-Yen Nguyen ◽  
Frederic Allibert ◽  
Christophe Girard ◽  
Christophe Maleville
Keyword(s):  
Thin Body ◽  
Fully Depleted ◽  
Buried Oxide
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