The electrical behavior of silicon carbide charge-balance (CB) Schottky/JBS diodes is examined. Based on the observed electrical characteristics, a subcircuit SPICE model for the experimental devices is proposed and validated against the data. The proposed model consists of a standard SPICE diode with custom parameters along with a network of discrete resistive and reactive subcircuit elements required to replicate the complex static and dynamic behavior of the experimental devices. With proper selection of component values, static, dynamic, and temperature-dependent device behavior are well modelled from room temperature to 150°C.
Appendix A: SPICE Model of Power MOSFETs
