A Subcircuit SPICE Model for SiC Charge-Balance Schottky Diodes

2020 ◽  
Vol 1004 ◽  
pp. 945-952
Author(s):  
Collin W. Hitchcock ◽  
Xiang Zhou ◽  
Gyanesh Pandey ◽  
Reza Ghandi ◽  
Alexander Bolotnikov ◽  
...  
Keyword(s):  
Room Temperature ◽  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Electrical Behavior ◽  
Charge Balance ◽  
Temperature Dependent ◽  
Proper Selection ◽  
Spice Model ◽  
Proposed Model ◽  
Selection Of

The electrical behavior of silicon carbide charge-balance (CB) Schottky/JBS diodes is examined. Based on the observed electrical characteristics, a subcircuit SPICE model for the experimental devices is proposed and validated against the data. The proposed model consists of a standard SPICE diode with custom parameters along with a network of discrete resistive and reactive subcircuit elements required to replicate the complex static and dynamic behavior of the experimental devices. With proper selection of component values, static, dynamic, and temperature-dependent device behavior are well modelled from room temperature to 150°C.

Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes

2005 ◽  
Vol 252 (4) ◽  
pp. 1153-1158 ◽  
Author(s):  
Enise Ayyildiz ◽  
Hidayet Cetin ◽  
Zs. J. Horváth
Keyword(s):  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Temperature Dependent

scholarly journals Meminductor Emulator Based on a Modified Antoniou’s Gyrator Circuit

Electronics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 1407
Author(s):  
Francisco J. Romero ◽  
Manuel Escudero ◽  
Alfredo Medina-Garcia ◽  
Diego P. Morales ◽  
Noel Rodriguez
Keyword(s):  
Practical Implementation ◽  
Electrical Behavior ◽  
Proper Selection ◽  
Continuous State ◽  
Input Signals ◽  
Selection Of

In this work, we presented the design and simulation of a new flux-controlled meminductor emulator based on a modified version of the well-known Antoniou’s inductor simulator circuit. The constitutive theoretical equations of meminductance are presented and subsequently correlated with the electrical behavior of Antoniou’s circuit, hence illustrating its practical meminductive behavior with a proper selection of feedback impedances. After that, the feasibility of a practical implementation using off-the-shelf devices is illustrated firstly for a two-state meminductor and secondly for a continuous-state meminductor by means of SPICE simulations. It was also demonstrated that this emulator can operate at different frequencies and input signals constituting one of the simplest and most versatile meminductor emulators to date.

Temperature Dependence of 4H-SiC JBS and Schottky Diodes after High Temperature Treatment of Contact Metal

2005 ◽  
Vol 483-485 ◽  
pp. 945-948 ◽  
Author(s):  
R. Pérez ◽  
Narcis Mestres ◽  
Dominique Tournier ◽  
Xavier Jordá ◽  
Phillippe Godignon ◽  
...  
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
Schottky Diodes ◽  
Temperature Treatment ◽  
High Temperature Treatment ◽  
Schottky Junction ◽  
Temperature Dependent ◽  
Working Temperature ◽  
Sic Wafer ◽  
Contact Metal

In this work we demonstrate performant characteristics of 1.2KV Schottky, Junction Barrier Schottky (JBS) and implanted PN diodes processed on the same 4H-SiC wafer. A bi-layer Ni/Ti scheme for the contact metallisation submitted to high temperature rapid thermal anneals is proved to form good ohmic contact on p+ implanted areas while maintaining good Schottky characteristics on lightly doped n-type regions. I-V characteristics have been evaluated from room temperature up to 560K. At room temperature, Schottky diodes have slightly better specific onresistance, but when working temperature is increased, the JBS diode exhibits better characteristics due to the temperature dependent activation of bipolar current injection from the p+ grid. From reverse measurements, the JBS diodes showed lower leakage current and higher breakdown voltages in comparison to that of the Schottky diodes in the whole range of temperatures.

scholarly journals Reduction of reverse leakage current at the TiO2/GaN interface in field plate Ni/Au/n-GaN Schottky diodes

2021 ◽  
Vol 24 (04) ◽  
pp. 399-406
Author(s):  
A.M. Goriachko ◽  
◽  
M.V. Strikha ◽  
◽  
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Temperature Dependent ◽  
Field Plate ◽  
Reverse Leakage Current ◽  
Plate Length ◽  
Fabrication Procedure ◽  
Field Oxide

This paper presents the fabrication procedure of TiO2 passivated field plate Schottky diode and gives a comparison of Ni/Au/n-GaN Schottky barrier diodes without field plate and with field plate of varying diameters from 50 to 300 µm. The influence of field oxide (TiO2) on the leakage current of Ni/Au/n-GaN Schottky diode was investigated. This suggests that the TiO2 passivated structure reduces the reverse leakage current of Ni/Au/n-GaN Schottky diode. Also, the reverse leakage current of Ni/Au/n-GaN Schottky diodes decreases as the field plate length increases. The temperature-dependent electrical characteristics of TiO2 passivated field plate Ni/Au/n-GaN Schottky diodes have shown an increase of barrier height within the temperature range 300…475 K.

Prediction of Workpiece Elastic Deformation Using FEM Based Contact Analysis

2016 ◽  
Vol 852 ◽  
pp. 498-503
Author(s):  
F. Michael Thomas Rex ◽  
D. Ravindran ◽  
N. Lenin
Keyword(s):  
Elastic Deformation ◽  
Material Removal ◽  
Rigid Bodies ◽  
Contact Analysis ◽  
Flexible Body ◽  
Proper Selection ◽  
Machining Forces ◽  
Proposed Model ◽  
Point Forces ◽  
Selection Of

The proper selection of fixtures and its locations is necessary to avoid the dimensional and form inaccuracies that are developed due to elastic deformation of the workpiece during machining. It is necessary to predict the elastic deformation with higher precision in order to eliminate the above inaccuracies during the design of fixtures. In the present work, a Finite Element Method (FEM) based 3D contact analysis has been proposed to evaluate the elastic deformation of the workpiece under the influence of fixtures and machining forces. In the proposed model, workpiece has been considered as flexible body and fixture elements (locators and clamps) as rigid bodies. A new concept of pre-stressed harmonic analysis has been introduced in order to simulate the machining forces. The contact area of the locators has been considered using contact elements and the clamping forces as point forces. The model for the analysis is developed in ANSYS environment with suitable elements. The effect of material removal has also been considered in the analysis in view of obtaining more accurate and realistic results. The deformation of the workpiece has been predicted for a particular location of clamps, locators and machining forces and presented. It is possible to optimize the location of clamps and locators under the influence of machining forces, the above analysis is suggested.

Control of Elongation in Highly Stretched Cotton Tire Cord

1946 ◽  
Vol 19 (1) ◽  
pp. 253-266
Author(s):  
Howard J. Philipp ◽  
Carl M. Conrad
Keyword(s):  
Room Temperature ◽  
Breaking Strength ◽  
Reciprocal Relationship ◽  
Second Phase ◽  
Tire Cord ◽  
Proper Selection ◽  
Two Phases ◽  
Heat And Moisture ◽  
Selection Of ◽  
Product Control

Abstract 1. Cotton tire cords, differing with regard to gauge, construction, and variety of cotton, were subjected to stretching treatments involving various combinations of tension, heat, and moisture. It was found that all these treatments increased the strength of the cords but reduced their gauge and elongation at 10 pounds. The greatest increase in strength was obtained when tire cord was stretched in a swollen condition and in the presence of heat. Increases in count-strength product from 48 to 83 per cent were observed. 2. Experiments showed a reciprocal relationship between the strength and the elongation at 10 pounds obtainable by single-stretching treatments of tire cord, which makes impossible the control of elongation, independently of strength. Bone-dry elongations of about 6 per cent at 10 pounds could be obtained only with negligible increase in strength. 3. The original elongation was restored by treating highly stretched tire cord with water at room temperature for 30 minutes or with boiling water for 3 minutes, while most of the increase in strength resulting from stretching was retained. A hot-wet-stretched tire cord after treating with water had equal elongation but greater strength as compared with the untreated cord. 4. A dual-stretching method was devised which makes possible the control of elongation at 10 pounds independently of strength. The treatment consists of two phases : the first imparts to the cord the maximum potential breaking strength and the second serves to adjust the elongation at 10 pounds to a predetermined controlled value while maintaining over 90 per cent of the maximum count-strength product. Control of the elongation is achieved by proper selection of tension and degree of swelling during the second phase of the dual-stretching treatment.

Investigation of temperature dependent electrical characteristics on Au/Ni/β-Ga 2 O 3 Schottky diodes

2018 ◽  
Vol 119 ◽  
pp. 212-217 ◽  
Author(s):  
Ang Li ◽  
Qian Feng ◽  
Jincheng Zhang ◽  
Zhuangzhuang Hu ◽  
Zhaoqing Feng ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Temperature Dependent

Characterization of Metal/Si1-xGex/Si Diodes Fabricated by Cryogenic Processing

1995 ◽  
Vol 379 ◽  
Author(s):  
L. He ◽  
E. Li ◽  
Z.Q. Shi ◽  
R.L. Jiang ◽  
J. L. Liu ◽  
...  
Keyword(s):  
Barrier Height ◽  
Room Temperature ◽  
Conduction Mechanism ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Nitrogen Atmosphere ◽  
Thin Layers ◽  
Electrical Characteristics ◽  
Current Voltage ◽  
Cryogenic Processing

ABSTRACTSchottky diodes were fabricated by evaporating metal thin layers on p-Si1-xGex by cryogenic processing. The cryogenic processing, with substrate temperature cooled to as low as 77K (LT), has been successfully used to enhance metal/III-V semiconductor Schottky barrier height[1]. The electrical characteristics of the diodes were investigated by current-voltage (IV) and current-temperature (I-T) measurements. In order to study the effect of silicide formation on diode characteristics, furnace annealing was performed in nitrogen atmosphere at 450°C and 550°C, respectively. Two kinds of samples with gemanium composition x of 0.17 and 0.20 were used. The electrical characteristics showed the barrier height фB decreased with the increase of the gemanium composition. The annealing temperatures up till to 550°C did not affect the I-V characteristics at room temperature, however, the conduction mechanism showed obvious difference comparing to the as-deposited diodes by I-V-T analysis. For Pd as Schottky metal, very similar results were obtained for the LT as-deposited diodes and the ordinary room temperature (RT) deposited diodes after 550° annealing, they both showed thermionic emission dominated conduction mechanism.

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