scholarly journals Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs

2016 ◽  
Vol 31 (2) ◽  
pp. 1555-1566 ◽  
Author(s):  
Zhiqiang Wang ◽  
Xiaojie Shi ◽  
Leon M. Tolbert ◽  
Fred Wang ◽  
Zhenxian Liang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Short Circuit ◽  
Temperature Dependent ◽  
Power Mosfets

scholarly journals A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs

2016 ◽  
Vol 4 (3) ◽  
pp. 978-987 ◽  
Author(s):  
Gianpaolo Romano ◽  
Asad Fayyaz ◽  
Michele Riccio ◽  
Luca Maresca ◽  
Giovanni Breglio ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Short Circuit ◽  
Power Mosfets ◽  
Comprehensive Study

scholarly journals Short-Circuit Capability Exploration of Silicon Carbide Devices

2015 ◽  
Vol 821-823 ◽  
pp. 810-813 ◽  
Author(s):  
Maxime Berthou ◽  
Dominique Planson ◽  
Dominique Tournier
Keyword(s):  
Silicon Carbide ◽  
Short Circuit ◽  
Electronic Systems ◽  
Power Electronic ◽  
Power Transistor ◽  
Power Transistors ◽  
Capacitive Load ◽  
Short Circuit Condition

With the commercial availability of SiC power transistors, this decade will mark an important breakthrough in power transistor technology. However, in power electronic systems, disturbances may place them in short-circuit condition and little knowledge exist about their SC capability. This paper presents our study of SiC MOSFETs, JFETs and BJT under capacitive load short-circuit up to 600V.

Surface Characterization of Silicon Carbide Following Shallow Implantation of Palladium Ions

2005 ◽  
Vol 900 ◽  
Author(s):  
Claudiu I. Muntele ◽  
Sergey Sarkisov ◽  
Iulia Muntele ◽  
Daryush Ila
Keyword(s):  
Silicon Carbide ◽  
Surface Characterization ◽  
Wide Bandgap ◽  
Electrical Contacts ◽  
Temperature Dependent ◽  
Wide Bandgap Semiconductor ◽  
Hydrogen Sensing ◽  
Fast Switching ◽  
Sensing Applications

ABSTRACTSilicon carbide is a promising wide-bandgap semiconductor intended for use in fabrication of high temperature, high power, and fast switching microelectronics components running without cooling. For hydrogen sensing applications, silicon carbide is generally used in conjunction with either palladium or platinum, both of them being good catalysts for hydrogen. Here we are reporting on the temperature-dependent surface morphology and depth profile modifications of Au, Ti, and W electrical contacts deposited on silicon carbide substrates implanted with 20 keV Pd ions.

Demonstration of Constant-Gate-Charge Scaling to Increase the Robustness of Silicon Carbide Power MOSFETs

2021 ◽  
pp. 1-5
Author(s):  
James A. Cooper ◽  
Dallas T. Morisette ◽  
Madankumar Sampath ◽  
Cheryl A. Stellman ◽  
Stephen B. Bayne ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Power Mosfets ◽  
Gate Charge

Comprehensive Analysis of Electrical Parameters Degradations for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

2018 ◽  
Vol 65 (12) ◽  
pp. 5440-5447 ◽  
Author(s):  
Jiaxing Wei ◽  
Siyang Liu ◽  
Lanlan Yang ◽  
Jiong Fang ◽  
Ting Li ◽  
...  
Keyword(s):  
Short Circuit ◽  
Comprehensive Analysis ◽  
Electrical Parameters ◽  
Power Mosfets

Modeling Li-Ion Battery Thermal Runaway Using a Three Section Thermal Model

2018 ◽  
Author(s):  
Ting Cai ◽  
Anna G. Stefanopoulou ◽  
Jason B. Siegel
Keyword(s):  
Short Circuit ◽  
Lithium Ion ◽  
Thermal Runaway ◽  
Model Complexity ◽  
Side Reactions ◽  
Temperature Dependent ◽  
Surface Layers ◽  
Computational Speed ◽  
Section Model

This paper presents a model describing lithium-ion battery thermal runaway triggered by an internal short. The model predicts temperature and heat generation from the internal short circuit and side reactions using a three-section model. The three sections correspond to the core, middle, and surface layers. At each layer, the temperature-dependent heat release and progression of the three major side reactions are modeled. A thermal runaway test was conducted on a 4.5 Ah nickel manganese cobalt oxide pouch cell, and the temperature measurements are used for model validation. The proposed reduced order model based on three sections can balance the computational speed with the model complexity required to predict the fast core temperature evolution and slower surface temperature growth. The model shows good agreement with the experimental data, and it will be further improved with formal tuning in a follow-up effort to enable early detection of thermal runway induced by internal short.

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