Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base–Collector Voltage Drop at Low Current

2019 ◽  
Vol 34 (10) ◽  
pp. 10136-10142 ◽  
Author(s):  
Bangbing Shi ◽  
Shiwei Feng ◽  
Yamin Zhang ◽  
Kun Bai ◽  
Yuxuan Xiao ◽  
...  
Keyword(s):  
Temperature Measurement ◽  
Measurement Method ◽  
Voltage Drop ◽  
Junction Temperature ◽  
Bipolar Junction Transistor ◽  
Collector Voltage ◽  
Junction Transistor

scholarly journals Development of an Electrothermal Simulation Tool for Integrated Circuits

2021 ◽  
Author(s):  
Sara Sharifian Attar
Keyword(s):  
Steady State ◽  
Integrated Circuits ◽  
Thermal Modeling ◽  
Experimental Results ◽  
Junction Temperature ◽  
Collector Current ◽  
Bipolar Junction Transistor ◽  
Circuit Simulator ◽  
Junction Transistor ◽  
Electrothermal Simulation

The goal of this research was to develop a capability for the electrothermal modeling of electronic circuits. The objective of the thermal modeling process was to create a model that represents the thermal behavior of the physical system. The project focuses on electrothermal analysis at devices and chip level. A novel method to perform electrothermal analysis of integrated circuits based on the relaxation approach is proposed in this research. An interface program couples a circuit simulator and a thermal simulator. The developed simulator is capable of performing both steady state and transient analaysis at devices and chip level. The proposed method was applied to perform electrothermal analysis of Silicon Bipolar Junction Transistor (BJT) to predict the temperature distribution and the device performance in a circuit. Thermal nonlinearity due to temperature-dependent material parameters in the context of thermal modeling of the device and circuit has also been considered. The DC characteristics of the device were investigated. The obtained results indicate that the operating point of the device varies while the device reaches its junction temperature. The accuracy of the electrothermal simulator has been evaluated for steady state analysis. The experimental results of a BJT amplifier were compared to the simulator results of the similar circuit. The electrothermal simulation results of BJT amplifier circuit indicate a good agreement with the available experimental results in terms of power dissipation, collector current and base-emitter voltage. The performance of the electrothermal simulator has been evaluated for tansient analysis. A current mirror circuit using Si NPN BJTs was simulated. According to the electrical simulator, the output current follows the reference current immediately. Nonetheless, the electrothermal simulator results depict that the load current has delay to reach a constant value which is not the same as the reference current, due to the influence of thermal coupling and self heating. The obtained results are in agreement with the available results in literature.

1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs

2005 ◽  
Vol 483-485 ◽  
pp. 901-904 ◽  
Author(s):  
Sumi Krishnaswami ◽  
Anant K. Agarwal ◽  
Craig Capell ◽  
Jim Richmond ◽  
Sei Hyung Ryu ◽  
...  
Keyword(s):  
Room Temperature ◽  
Voltage Drop ◽  
Active Area ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Collector Current ◽  
Bipolar Junction Transistor ◽  
Forward Voltage Drop ◽  
Junction Transistor ◽  
A Current

1000 V Bipolar Junction Transistor and integrated Darlington pairs with high current gain have been developed in 4H-SiC. The 3.38 mm x 3.38 mm BJT devices with an active area of 3 mm x 3 mm showed a forward on-current of 30 A, which corresponds to a current density of 333 A/cm2, at a forward voltage drop of 2 V. A common-emitter current gain of 40 was measured on these devices. A specific on-resistance of 6.0 mW-cm2 was observed at room temperature. The onresistance increases at higher temperatures, while the current gain decreases to 30 at 275°C. In addition, an integrated Darlington pair with an active area of 3 mm x 3 mm showed a collector current of 30 A at a forward drop of 4 V at room temperature. A current gain of 2400 was measured on these devices. A BVCEO of 1000 V was measured on both of these devices.

scholarly journals Development of an Electrothermal Simulation Tool for Integrated Circuits

2021 ◽  
Author(s):  
Sara Sharifian Attar
Keyword(s):  
Steady State ◽  
Integrated Circuits ◽  
Thermal Modeling ◽  
Experimental Results ◽  
Junction Temperature ◽  
Collector Current ◽  
Bipolar Junction Transistor ◽  
Circuit Simulator ◽  
Junction Transistor ◽  
Electrothermal Simulation

The goal of this research was to develop a capability for the electrothermal modeling of electronic circuits. The objective of the thermal modeling process was to create a model that represents the thermal behavior of the physical system. The project focuses on electrothermal analysis at devices and chip level. A novel method to perform electrothermal analysis of integrated circuits based on the relaxation approach is proposed in this research. An interface program couples a circuit simulator and a thermal simulator. The developed simulator is capable of performing both steady state and transient analaysis at devices and chip level. The proposed method was applied to perform electrothermal analysis of Silicon Bipolar Junction Transistor (BJT) to predict the temperature distribution and the device performance in a circuit. Thermal nonlinearity due to temperature-dependent material parameters in the context of thermal modeling of the device and circuit has also been considered. The DC characteristics of the device were investigated. The obtained results indicate that the operating point of the device varies while the device reaches its junction temperature. The accuracy of the electrothermal simulator has been evaluated for steady state analysis. The experimental results of a BJT amplifier were compared to the simulator results of the similar circuit. The electrothermal simulation results of BJT amplifier circuit indicate a good agreement with the available experimental results in terms of power dissipation, collector current and base-emitter voltage. The performance of the electrothermal simulator has been evaluated for tansient analysis. A current mirror circuit using Si NPN BJTs was simulated. According to the electrical simulator, the output current follows the reference current immediately. Nonetheless, the electrothermal simulator results depict that the load current has delay to reach a constant value which is not the same as the reference current, due to the influence of thermal coupling and self heating. The obtained results are in agreement with the available results in literature.

1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance

2008 ◽  
Vol 600-603 ◽  
pp. 1151-1154 ◽  
Author(s):  
Hyung Seok Lee ◽  
Martin Domeij ◽  
Carl Mikael Zetterling ◽  
Reza Ghandi ◽  
Mikael Östling ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Voltage Drop ◽  
Surface Recombination ◽  
High Gain ◽  
Current Gain ◽  
Bipolar Junction Transistor ◽  
Forward Voltage Drop ◽  
Junction Transistor ◽  
Recombination Current ◽  
Reduced Surface

This paper reports a 4H-SiC bipolar junction transistor (BJT) with a breakdown voltage (BVCEO) of 1200 V, a maximum current gain (β) of 60 and the low on-resistance (Rsp_on)of 5.2 mΩcm2. The high gain is attributed to an improved surface passivation SiO2 layer which was grown in N2O ambient in a diffusion furnace. The SiC BJTs with passivation oxide grown in N2O ambient show less emitter size dependence than reference SiC BJTs, with conventional SiO2 passivation, due to a reduced surface recombination current. SiC BJT devices with an active area of 1.8 mm × 1.8 mm showed a current gain of 53 in pulsed mode and a forward voltage drop of VCE=2V at IC=15 A (JC=460 A/cm2).

A Simple and Reliable Electrical Method for Measuring the Junction Temperature and Thermal Resistance of 4H-SiC Power Bipolar Junction Transistors

2008 ◽  
Vol 600-603 ◽  
pp. 1171-1174 ◽  
Author(s):  
K.G.P. Eriksson ◽  
Martin Domeij ◽  
Hyung Seok Lee ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Thermal Resistance ◽  
Temperature Dependence ◽  
Power Dissipation ◽  
Junction Temperature ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Electrical Method ◽  
Bipolar Junction Transistor ◽  
Self Heating ◽  
Junction Transistor

To determine the maximum allowed power dissipation in a power transistor, it is important to determine the relationship between junction temperature and power dissipation. This work presents a new method for measuring the junction temperature in a SiC bipolar junction transistor (BJT) that is self-heated during DC forward conduction. The method also enables extraction of the thermal resistance between junction and ambient by measurements of the junction temperature as function of DC power dissipation. The basic principle of the method is to determine the temperature dependent I-V characteristics of the transistor under pulsed conditions with negligible self-heating, and compare these results with DC measurements with self-heating. Consistent results were obtained from two independent temperature measurements using the temperature dependence of the current gain, and the temperature dependence of the base-emitter I-V characteristics, respectively.

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