A Simple and Reliable Electrical Method for Measuring the Junction Temperature and Thermal Resistance of 4H-SiC Power Bipolar Junction Transistors

2008 ◽  
Vol 600-603 ◽  
pp. 1171-1174 ◽  
Author(s):  
K.G.P. Eriksson ◽  
Martin Domeij ◽  
Hyung Seok Lee ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Thermal Resistance ◽  
Temperature Dependence ◽  
Power Dissipation ◽  
Junction Temperature ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Electrical Method ◽  
Bipolar Junction Transistor ◽  
Self Heating ◽  
Junction Transistor

To determine the maximum allowed power dissipation in a power transistor, it is important to determine the relationship between junction temperature and power dissipation. This work presents a new method for measuring the junction temperature in a SiC bipolar junction transistor (BJT) that is self-heated during DC forward conduction. The method also enables extraction of the thermal resistance between junction and ambient by measurements of the junction temperature as function of DC power dissipation. The basic principle of the method is to determine the temperature dependent I-V characteristics of the transistor under pulsed conditions with negligible self-heating, and compare these results with DC measurements with self-heating. Consistent results were obtained from two independent temperature measurements using the temperature dependence of the current gain, and the temperature dependence of the base-emitter I-V characteristics, respectively.

1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs

2005 ◽  
Vol 483-485 ◽  
pp. 901-904 ◽  
Author(s):  
Sumi Krishnaswami ◽  
Anant K. Agarwal ◽  
Craig Capell ◽  
Jim Richmond ◽  
Sei Hyung Ryu ◽  
...  
Keyword(s):  
Room Temperature ◽  
Voltage Drop ◽  
Active Area ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Collector Current ◽  
Bipolar Junction Transistor ◽  
Forward Voltage Drop ◽  
Junction Transistor ◽  
A Current

1000 V Bipolar Junction Transistor and integrated Darlington pairs with high current gain have been developed in 4H-SiC. The 3.38 mm x 3.38 mm BJT devices with an active area of 3 mm x 3 mm showed a forward on-current of 30 A, which corresponds to a current density of 333 A/cm2, at a forward voltage drop of 2 V. A common-emitter current gain of 40 was measured on these devices. A specific on-resistance of 6.0 mW-cm2 was observed at room temperature. The onresistance increases at higher temperatures, while the current gain decreases to 30 at 275°C. In addition, an integrated Darlington pair with an active area of 3 mm x 3 mm showed a collector current of 30 A at a forward drop of 4 V at room temperature. A current gain of 2400 was measured on these devices. A BVCEO of 1000 V was measured on both of these devices.

4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile

2009 ◽  
Vol 615-617 ◽  
pp. 829-832 ◽  
Author(s):  
Jian Hui Zhang ◽  
Leonid Fursin ◽  
Xue Qing Li ◽  
Xiao Hui Wang ◽  
Jian Hui Zhao ◽  
...  
Keyword(s):  
High Performance ◽  
Chemical Vapor ◽  
Doping Profile ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Bipolar Junction Transistor ◽  
Blocking Voltage ◽  
Junction Transistor ◽  
Dc Current ◽  
Base Doping

This work reports 4H-SiC bipolar junction transistor (BJT) results based upon our first intentionally graded base BJT wafer with both base and emitter epi-layers continuously grown in the same reactor. The 4H-SiC BJTs were designed to improve the common emitter current gain through the built-in electrical fields originating from the grading of the base doping. Continuously-grown epi-layers are also believed to be the key to increasing carrier lifetime and high current gains. The 4H-SiC BJT wafer was grown in an Aixtron/Epigress VP508, a horizontal hot-wall chemical vapor deposition reactor using standard silane/propane chemistry and nitrogen and aluminum dopants. High performance 4H-SiC BJTs based on this initial non-optimized graded base doping have been demonstrated, including a 4H-SiC BJT with a DC current gain of ~33, specific on-resistance of 2.9 mcm2, and blocking voltage VCEO of over 1000 V.

scholarly journals Electrothermal Model of SiC Power BJT

Energies ◽  
2020 ◽  
Vol 13 (10) ◽  
pp. 2617
Author(s):  
Joanna Patrzyk ◽  
Damian Bisewski ◽  
Janusz Zarębski
Keyword(s):  
Gain Factor ◽  
Current Gain ◽  
Electrical Model ◽  
Modified Model ◽  
Bipolar Junction Transistor ◽  
Self Heating ◽  
Saturation Region ◽  
Junction Transistor ◽  
Temperature Impact ◽  
Research Show

This paper refers to the issue of modelling characteristics of SiC power bipolar junction transistor (BJT), including the self-heating phenomenon. The electrothermal model of the tested device is demonstrated and experimentally verified. The electrical model is based on the isothermal Gummel–Poon model, but several modifications were made including the improved current gain factor (β) model and the modified model of the quasi-saturation region. The accuracy of the presented model was assessed by comparison of measurement and simulation results of selected characteristics of the BT1206-AC SiC BJT manufactured by TranSiC. In this paper, a single device characterization has only been performed. The demonstrated results of research show the evident temperature impact on the transistor d.c. characteristics. A good compliance between the measured and calculated characteristics of the considered transistor is observed even in quasi-saturation mode.

Control of Bipolar Junction Transistor Current Grain Using Rapid Thermal Processing.

1987 ◽  
Vol 92 ◽  
Author(s):  
A. Kermani ◽  
F. Van Gieson ◽  
S. Litwin ◽  
R. Sullivan ◽  
T. J. DeBolske ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Electrical Characteristics ◽  
Bipolar Junction Transistor ◽  
Junction Transistor ◽  
The Common ◽  
Profile Technique ◽  
Better Than

ABSTRACTThe activation of ion implanted emitters for two types of NPN bipolar junction transistors ( BJT ) by rapid thermal processing (RTP) was evaluated. The dopant profiles and the resultant junction depths were measured for various thermal cycles, using spreading resistance profile technique. The electrical characteristics of the transistors were then determined and compared to the standard furnace processes. The common emitter current gain values, hFE, for arsenic emitters were low and phosphorous emitters exhibited improved or comparable betas. The breakdown voltages in common emitter configuration, BV,CEO, BVcEs and BVEBO were comparable or better than the furnace annealed samples and no evidence of transistor leakage was observed.

scholarly journals Development of an Electrothermal Simulation Tool for Integrated Circuits

2021 ◽  
Author(s):  
Sara Sharifian Attar
Keyword(s):  
Steady State ◽  
Integrated Circuits ◽  
Thermal Modeling ◽  
Experimental Results ◽  
Junction Temperature ◽  
Collector Current ◽  
Bipolar Junction Transistor ◽  
Circuit Simulator ◽  
Junction Transistor ◽  
Electrothermal Simulation

The goal of this research was to develop a capability for the electrothermal modeling of electronic circuits. The objective of the thermal modeling process was to create a model that represents the thermal behavior of the physical system. The project focuses on electrothermal analysis at devices and chip level. A novel method to perform electrothermal analysis of integrated circuits based on the relaxation approach is proposed in this research. An interface program couples a circuit simulator and a thermal simulator. The developed simulator is capable of performing both steady state and transient analaysis at devices and chip level. The proposed method was applied to perform electrothermal analysis of Silicon Bipolar Junction Transistor (BJT) to predict the temperature distribution and the device performance in a circuit. Thermal nonlinearity due to temperature-dependent material parameters in the context of thermal modeling of the device and circuit has also been considered. The DC characteristics of the device were investigated. The obtained results indicate that the operating point of the device varies while the device reaches its junction temperature. The accuracy of the electrothermal simulator has been evaluated for steady state analysis. The experimental results of a BJT amplifier were compared to the simulator results of the similar circuit. The electrothermal simulation results of BJT amplifier circuit indicate a good agreement with the available experimental results in terms of power dissipation, collector current and base-emitter voltage. The performance of the electrothermal simulator has been evaluated for tansient analysis. A current mirror circuit using Si NPN BJTs was simulated. According to the electrical simulator, the output current follows the reference current immediately. Nonetheless, the electrothermal simulator results depict that the load current has delay to reach a constant value which is not the same as the reference current, due to the influence of thermal coupling and self heating. The obtained results are in agreement with the available results in literature.

scholarly journals Effect of Gamma Radiation on Characteristic of bipolar junction Transistors (BJTs )

2021 ◽  
pp. 1-9
Author(s):  
Abdenabi Ali Elamin ◽  
Waell H Alawad
Keyword(s):  
Gamma Radiation ◽  
Power Supplies ◽  
Strong Increase ◽  
Bipolar Junction Transistors ◽  
Bipolar Junction Transistor ◽  
Before And After ◽  
Junction Transistor ◽  
The Individual ◽  
Silicon Transistor ◽  
Different Doses

This paper describes the effects of 60Cogamma radiation hardness of characteristic and parameters of Bipolar Junction Transistors in order to analyze the performance changes of the individual devices used in nuclear field. Bipolar Junction Transistor (BJT) of the type (BC-301) (npn) silicon, Transistor was irradiated by gamma radiation using 60Cosource at different doses (1, 2, 3, 4, and 5) KGy. The characteristics and parameter of Bipolar Junction Transistor was studied before and after irradiated by using Transistor Characteristics Apparatus with regulated power supplies. Obtained result showed that, the saturation voltage VCE(sat) of Bipolar Junction Transistor decreased because of the gain degradation of the transistor and increased silicon resistivity, Another parameter of a bipolar junction transistor affected by ionizing radiation is a collector-base leakage current, a strong increase of the current is caused by the build-up charge near the junction.

IV-Characteristics Measurement Error Resulting from Long Cables for Irradiated Bipolar Junction Transistors

2015 ◽  
Vol 1083 ◽  
pp. 185-189 ◽  
Author(s):  
Konstantin O. Petrosyants ◽  
Igor A. Kharitonov ◽  
Lev M. Sambursky ◽  
Maxim V. Kozhukhov
Keyword(s):  
Measurement Error ◽  
Bipolar Junction Transistors ◽  
Bipolar Junction Transistor ◽  
Wire Method ◽  
Junction Transistor

I-V-characteristics of an irradiated transistor in many cases should be measured inside the radiation chamber with long cables, which introduces noticeable measurement error. In this paper IV-characteristics of an irradiated bipolar junction transistor measured with the 4-wire and the 2-wire circuits are presented and compared to direct (without cables) measurements. Significant enlargement of measurement error for the 2-wire method in comparison with the 4-wire method is shown for different currents.

scholarly journals Ultra-High Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor for -1…+1 kPa

2021 ◽  
Author(s):  
Mikhail
Keyword(s):  
Circuit Design ◽  
Pressure Sensor ◽  
Feedback Loop ◽  
High Sensitivity ◽  
Electrical Circuit ◽  
Bipolar Junction Transistors ◽  
Chip Area ◽  
Bipolar Junction Transistor ◽  
Junction Transistor ◽  
Type V

The theoretical model and experimental characteristics of ultra-high sensitivity MEMS pressure sensor chip for 1 kPa utilizing a novel electrical circuit are presented. The electrical circuit uses piezosensitive differential amplifier with negative feedback loop (PDA-NFL) based on two bipolar-junction transistors (BJT). The BJT has a vertical structure of n-p-n type (V-NPN) formed on a non-deformable chip area. The circuit contains eight piezoresistors located on a profiled membrane in the areas of maximum mechanical stresses. The circuit design provides a balance between high pressure sensitivity (S =44.9 mV/V/kPa) and fairly low temperature coefficient of zero signal (TCZ = 0.094% FS/°C). Additionally, high membrane burst pressure of P = 550 kPa was reached.

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