Efficient Multi-Scale Self-Consistent Simulation of Planar Schottky-Barrier Carbon Nanotube Field-Effect Transistors and Arrays

2010 ◽  
Author(s):  
Tarek M. Abdolkader ◽  
Muhammad A. Alam
Keyword(s):  
Carbon Nanotube ◽  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Multi Scale ◽  
Self Consistent

Optimization of Schottky barrier carbon nanotube field effect transistors

2005 ◽  
Vol 81 (2-4) ◽  
pp. 428-433 ◽  
Author(s):  
M. Pourfath ◽  
E. Ungersboeck ◽  
A. Gehring ◽  
B.H. Cheong ◽  
W.J. Park ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors

Self-consistent simulation of multi-walled CNT nanotransistors

2010 ◽  
Vol 2 (5) ◽  
pp. 453-456 ◽  
Author(s):  
Davide Mencarelli ◽  
Luca Pierantoni ◽  
Andrea D. Donato ◽  
Tullio Rozzi
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistors ◽  
The Self ◽  
Simulation Tool ◽  
Numerical Convergence ◽  
Current Voltage ◽  
Self Consistent ◽  
Current Voltage Characteristics

We present detailed results of the self-consistent analysis of carbon nanotube (CNT) field-effect transistors (FET), previously extended by us to the case of multi-walled/multi-band coherent carrier transport. The contribution to charge transport, due to different walls and sub-bands of a multi-walled CNT, is shown to be generally non-negligible. In order to prove the effectiveness of our simulation tool, we provide interesting examples about current–voltage characteristics of four-walled semi-conducting nanotubes, including details of numerical convergence and contribution of sub-bands to the calculation.

scholarly journals High-Frequency Capability of Schottky-Barrier Carbon Nanotube FETs

2007 ◽  
Vol 121-123 ◽  
pp. 693-696 ◽  
Author(s):  
Leonardo C. Castro ◽  
D.L. Pulfrey ◽  
D.L. John
Keyword(s):  
Carbon Nanotube ◽  
Schottky Barrier ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Schottky Contacts ◽  
Small Signal ◽  
Gate Electrode ◽  
Figures Of Merit ◽  
Significant Bias

The high-frequency capability of carbon nanotube field-effect transistors is investigated by simulating the small-signal performance of a device with negative-barrier Schottky contacts for the source and drain, and with a small, ungated region of nanotube between the end contacts and the edge of the wrap-around gate electrode. The overall structure is shown to exhibit resonant behaviour, which leads to a significant bias dependence of the small-signal capacitances and transconductance. This could lead to high-frequency figures of merit (fT and fmax) in the terahertz regime.

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