Assessment of technological device parameters by low-frequency noise investigation in SOI omega-gate nanowire NMOS FETs
HEMTs for low-power and low-frequency noise 4.2 K cryoelectronics : fabrication and characterization
1998 ◽
Vol 08
(PR3)
◽
pp. Pr3-131-Pr3-134
◽
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1999 ◽
2002 ◽
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