A 5nm Wide Voltage Range Ultra High Density SRAM Design for L2/L3 Cache Applications

2021 ◽  
Author(s):  
Sriharsha Enjapuri ◽  
Deepesh Gujjar ◽  
Sandipan Sinha ◽  
Ramesh Halli ◽  
Manish Trivedi
Keyword(s):  
High Density ◽  
Voltage Range ◽  
Sram Design

A Robust SRAM Design for Ultra Dynamic Voltage Scalable VLSI System

2012 ◽  
Vol 182-183 ◽  
pp. 450-455
Author(s):  
Jun Yang ◽  
Na Bai ◽  
Wei Qi Wu ◽  
Wei Wei Shan ◽  
Zhi Kuang Cai
Keyword(s):  
Energy Supply ◽  
Supply Voltage ◽  
Schmitt Trigger ◽  
Cmos Technology ◽  
Dynamic Voltage Scaling ◽  
Voltage Range ◽  
Optimum Energy ◽  
Sram Design ◽  
Vlsi System ◽  
Dynamic Voltage

In this paper, a SRAM array targeting IBM 130nm CMOS technology is proposed for ultra dynamic voltage scaling (UDVS) application with better immunity against process variation. A type of modified Schmitt Trigger inverter is adopted in the SRAM design, which guarantee stable operations in both superthreshold and subthreshold supply voltage regions. Testing results demonstrate that the proposed SRAM array functions well in the supply voltage range of 150 mV to 1200 mV. The optimum-energy supply voltage point is about 400 mV for proposed UDVS SRAM array. And the energy at 400 mV decreases by 62.5% compared to that at 1200 mV.

6T SRAM design for wide voltage range in 28nm FDSOI

2012 ◽  
Author(s):  
O. Thomas ◽  
B. Zimmer ◽  
B. Pelloux-Prayer ◽  
N. Planes ◽  
K-C. Akyel ◽  
...  
Keyword(s):  
Voltage Range ◽  
Sram Design

A novel high-density dual threshold GNRFET SRAM design with improved stability

2020 ◽  
Vol 73 ◽  
pp. 102956 ◽  
Author(s):  
Pramod Kumar Patel ◽  
M.M. Malik ◽  
Tarun K. Gupta
Keyword(s):  
High Density ◽  
Sram Design ◽  
Improved Stability

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

Quantitative defect studies in semiconductor TEM samples prepared by low angle ion milling

1995 ◽  
Vol 53 ◽  
pp. 512-513
Author(s):  
L. Mulestagno ◽  
J.C. Holzer ◽  
P. Fraundorf
Keyword(s):  
Sample Preparation ◽  
Milling Time ◽  
High Density ◽  
Low Density ◽  
Ion Milling ◽  
High Quality ◽  
Variable Angle ◽  
Major Disadvantage ◽  
Induced Defects

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).

Using the scanning electron microscope for failure analysis of high density magnetic media

1987 ◽  
Vol 45 ◽  
pp. 392-393
Author(s):  
Evelyn R. Ackerman ◽  
Gary D. Burnett
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
High Density ◽  
Magnetic Media ◽  
Specific Data ◽  
Retrieval Systems ◽  
Operating Environments ◽  
The Media ◽  
Scanning Electron

Advancements in state of the art high density Head/Disk retrieval systems has increased the demand for sophisticated failure analysis methods. From 1968 to 1974 the emphasis was on the number of tracks per inch. (TPI) ranging from 100 to 400 as summarized in Table 1. This emphasis shifted with the increase in densities to include the number of bits per inch (BPI). A bit is formed by magnetizing the Fe203 particles of the media in one direction and allowing magnetic heads to recognize specific data patterns. From 1977 to 1986 the tracks per inch increased from 470 to 1400 corresponding to an increase from 6300 to 10,800 bits per inch respectively. Due to the reduction in the bit and track sizes, build and operating environments of systems have become critical factors in media reliability.Using the Ferrofluid pattern developing technique, the scanning electron microscope can be a valuable diagnostic tool in the examination of failure sites on disks.

Analysis of photographic emulsions for High-Voltage Electron Microscopy

1993 ◽  
Vol 51 ◽  
pp. 452-453 ◽  
Author(s):  
James R. Kremer ◽  
Paul S. Furcinitti ◽  
Eileen O’Toole ◽  
J. Richard McIntosh
Keyword(s):  
Electron Microscope ◽  
Optical Density ◽  
High Voltage ◽  
Noise Power ◽  
Limited Information ◽  
Modulation Transfer ◽  
Transmission Microscopy ◽  
High Voltage Electron Microscopy ◽  
Voltage Range ◽  
Voltage Electron

Characteristics of electron microscope film emulsions, such as the speed, the modulation transfer function, and the exposure dependence of the noise power spectrum, have been studied for electron energies (80-100keV) used in conventional transmission microscopy. However, limited information is available for electron energies in the intermediate to high voltage range, 300-1000keV. Furthermore, emulsion characteristics, such as optical density versus exposure, for new or improved emulsions are usually only quoted by film manufacturers for 80keV electrons. The need for further film emulsion studies at higher voltages becomes apparent when searching for a film to record low dose images of radiation sensitive biological specimens in the frozen hydrated state. Here, we report the optical density, speed and relative resolution of a few of the more popular electron microscope films after exposure to 1MeV electrons.Three electron microscope films, Kodak S0-163, Kodak 4489, and Agfa Scientia 23D56 were tested with a JEOLJEM-1000 electron microscope operating at an accelerating voltage of 1000keV.

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